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Preparation method of polystyrene-based mesoporous silica film

A technology of polystyrene and silicon dioxide, applied in the direction of coating, electrolytic coating, electrophoretic plating, etc., to achieve the effect of simple equipment, uniform thickness and smooth surface

Inactive Publication Date: 2011-05-11
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned literature reports all prepare silicon dioxide films on inorganic substrates, and there is no report on the preparation of silicon dioxide films with polymers as substrates.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: The preparation process is carried out according to the following steps

[0014] (1) Modified polystyrene: Soak polystyrene flakes (15×15×2mm) with concentrated sulfuric acid with a concentration of 98% at room temperature for 72 hours for sulfonation modification, and the modified polystyrene The flakes were rinsed with deionized water and dried to obtain a polystyrene matrix;

[0015] (2) Preparation of sol-gel precursor solution: with ammonia as catalyst, orthosilicate as silicon source, water, ammonia and orthosilicate in molar ratio n(H 2 O):n(NH 3 ):n(TEOS)=1:0.008:0.012 was added to the reactor and stirred for 2-3 hours until the two-phase system finally became a semi-clear solution, the solution was filtered, and the clarified filtrate was aged at room temperature for 20 hours to obtain a sol solution;

[0016] (3) Preparation of mesoporous film: put two electrode plates into the sol solution with an interval of 20 mm, and place the polystyrene ...

Embodiment 2

[0017] Embodiment 2: with the polystyrene matrix that embodiment 1 step (1) makes, at room temperature, with ammoniacal liquor, water and ethyl orthosilicate in molar ratio n(H 2 O):n(NH 3 ):n(TEOS)=1:0.008:0.012 was added to the flask and stirred vigorously for 2-3 hours until the two-phase system finally became a semi-clear solution. Filter the solution, and age the clarified filtrate at room temperature for 20 hours for later use; put the two electrode plates into the sol solution with an interval of 20 mm, and place the polystyrene matrix at a distance of 1 mm from the anode, and place them on both sides of the plates Add an external electric field voltage of 3.2V to the terminal. After 6 hours, a polystyrene-based silica deposition film was obtained. The polystyrene-based mesoporous silica film was dried at room temperature. The film thickness was 0.42 μm, and the film was relatively smooth.

Embodiment 3

[0018] Embodiment 3: with the polystyrene substrate that embodiment 1 step (1) makes, at room temperature, with ammoniacal liquor, water and tetraethyl orthosilicate in molar ratio n(H 2 O):n(NH 3 ):n(TEOS)=1:0.008:0.012 was added to the flask and stirred for 2-3 hours until the two-phase system finally became a semi-clear solution. Filter the solution, and age the clarified filtrate at room temperature for 20 hours for later use; put the two electrode plates into the sol solution with an interval of 20 mm, and place the polystyrene matrix at a distance of 1 mm from the anode, and place them on both sides of the plates End with an external electric field 3.6V. After 6 hours, a polystyrene-based silica deposition film was obtained, and the film was dried at room temperature to obtain a polystyrene-based mesoporous silica film. The film was smooth and smooth, with no defects on the surface, the film thickness was 0.75 μm, and the pores were worm-shaped. shape.

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Abstract

The invention relates to a preparation method of a polystyrene-based mesoporous silica film. The preparation method comprises the following steps: carrying out surface sulfonation modification on a polystyrene slice; mixing and stirring water (H2O), ammonia water (NH3) and tetraethoxysilane (TEOS) in a mole proportion of 1:0.008:0.012 to prepare a sol solution, wherein the ammonia water serves as a catalyst, and the tetraethoxysilane serves as a silicon source; putting two electrode pads in the sole solution, deviating a polystyrene matrix to an anode plate, applying an electric field at two ends of the electrode pads, and applying an electric field at the two ends of the electrode pads for 4 hours-7 hours by using a voltage of 2.8V-4.0V; and obtaining a polystyrene-based mesoporous silica deposition film, drying and then obtaining the polystyrene-based mesoporous silica film. The film is even in thickness, the surface is smooth and has no crack, and vermicule-like mesoporous pore canals are formed and have a certain order. The preparation method in the invention is low in cost, simple to operate and easy to control, the required equipment is simple, and the large-scale production can be achieved.

Description

Technical field: [0001] The invention relates to a method for preparing a mesoporous silicon dioxide film, in particular to a method for preparing a mesoporous silicon dioxide film on a polymer matrix by a sol-gel method. Background technique: [0002] Mesoporous silica films have various excellent physical properties: such as ultra-low refractive index, low dielectric constant, etc., and excellent mechanical properties, making them suitable for use in sensors, electronic equipment, anti-reflection coatings, hard films, and multilayer films. and optical materials and other fields have potential applications. At present, most of the preparation methods of mesoporous silica films are to deposit silica films on inorganic substrates, such as: in the document Thin Solid Films, 2003, 437:211, Ford et al. 550mJ / pulse laser energy, under the condition of laser repetition rate of 25Hz, the formed silicon dioxide is deposited on the Si(001) substrate to obtain a silicon dioxide film....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J7/06C25D13/02
Inventor 魏刚王晓娜李华芳白阿香陈晓晓
Owner BEIJING UNIV OF CHEM TECH
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