Monocrystalline thin film heterojunction solar cell and preparation method thereof
A single crystal thin film and solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of battery efficiency reduction and achieve the effects of reducing recombination, improving efficiency, and increasing collection rate
Inactive Publication Date: 2013-01-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
[0003] However, the mobility of amorphous silicon is only 10V.s / cm 2 Below, the minority carrier lifetime is estimated to be on the order of nanoseconds
Even with the transition of microcrystalline silicon and nanocrystalline silicon, the carrier recombination caused by their huge body surface area will reduce the battery efficiency
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[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0045] The present invention will replace amorphous silicon with single crystal thin film, and make use of the characteristics of high mobility and long life of single crystal thin film. As long as misfit dislocations and crossing dislocations are properly controlled, the shortage of amorphous silicon can be avoided, and silicon solar energy can be improved. battery efficiency. The realization principle of the present invention mainly relates to following three aspects:
[0046] 1) Single crystal thin film heterojunction solar cell structure
[0047] Such as figure 1 as shown, figure 1 It is a schematic diagram of a single crystal thin film heterojunction solar cell. Prepare a wide bandgap single crystal thin film on ...
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The invention discloses a monocrystalline thin film heterojunction solar cell and a preparation method thereof. The monocrystalline thin film heterojunction solar cell comprises a first conduction type substrate, a second conduction type single crystalline layer and a passivating dielectric layer (with rough surface) which are formed on the sunny side of the first conduction type substrate in sequence, a first conduction type single crystalline layer and an insulated dielectric layer which are formed on the backlight surface of the first conduction type substrate in sequence, a first electrode formed on the second conduction type single crystalline layer on the sunny side and a second electrode formed on the first conduction type single crystalline layer on the backlight surface. The defects of low carrier mobility in the amorphous-silicon thin film and short service life of the minority carrier are avoided, so that the efficiency of the heterojunction solar cell with the intrinsic thin layer is improved.
Description
technical field [0001] The invention relates to the technical field of Si optoelectronics, in particular to a single crystal thin film heterojunction solar cell and a preparation method thereof. Background technique [0002] The heterojunction (HIT) solar cell with intrinsic thin film is a product of Sanya Corporation in Japan. It uses crystalline silicon as a substrate, and prepares reverse-type heavily doped amorphous silicon on its upper surface, forming a light-facing structure with the crystalline silicon substrate. surface pn junction; at the same time, the same type heavily doped amorphous silicon is prepared on the lower surface of the crystalline silicon substrate. The crystalline silicon substrate is used to absorb light, the wide band gap of amorphous silicon is used to increase the open circuit voltage of the battery, and at the same time, the tunneling effect of the film is used to guide the current. The highest efficiency of its batteries reaches 23%, and the ...
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IPC IPC(8): H01L31/072H01L31/036H01L31/18H01L31/0745
CPCY02E10/50Y02P70/50
Inventor 韩培德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI