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P-type polyacrylamide/N-type silicon heterogeneous three-state output PN (Positive-Negative) junction, preparation method thereof and diode using same

A polyacrylamide, tri-state output technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that unidirectional current does not have stable and identifiable tri-state direct output, and achieve a simple structure. Effect

Inactive Publication Date: 2011-05-18
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problem that the existing PN junction and the diode using the PN junction do not have a stable, identifiable, and transferable three-state direct output problem for unidirectional current, the proposed P-type polyacrylamide / N-type silicon heterogeneous Three-state output PN junction and manufacturing method and diode using the PN junction

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  • P-type polyacrylamide/N-type silicon heterogeneous three-state output PN (Positive-Negative) junction, preparation method thereof and diode using same
  • P-type polyacrylamide/N-type silicon heterogeneous three-state output PN (Positive-Negative) junction, preparation method thereof and diode using same
  • P-type polyacrylamide/N-type silicon heterogeneous three-state output PN (Positive-Negative) junction, preparation method thereof and diode using same

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specific Embodiment approach 1

[0010] Specific implementation mode one: combine figure 1 To illustrate this embodiment, the P-type polyacrylamide\N-type silicon heterogeneous three-state output PN junction of this embodiment is composed of an N-type silicon chip 1 and a P-type polyacrylamide coating 2; one side of the N-type silicon chip 1 A P-type polyacrylamide coating 2 is coated on the surface, and the P-type polyacrylamide coating 2 directly contacts the surface of the N-type silicon wafer 1 . Its manufacturing process is as follows: directly coat N-type polyacrylamide aqueous solution on the surface of N-type silicon wafer 1, and form P-type polyacrylamide coating 2 after drying, both N-type silicon wafer and P-type polyacrylamide coating 2 This heterogeneous PN junction is formed.

specific Embodiment approach 2

[0011] Embodiment 2: This embodiment differs from Embodiment 1 in that the P-type polyacrylamide coating 2 contains boric acid. Other compositions and connection methods are the same as those in Embodiment 1.

specific Embodiment approach 3

[0012] Specific implementation mode three: combination figure 2 Describe this implementation mode. The difference between this implementation mode and specific implementation mode 1 is that a P-type polyacrylamide\N-type silicon heterogeneous three-state output diode is composed of a P-type polyacrylamide\N-type silicon heterogeneous three-state Output PN junction and two electrodes; the P-type polyacrylamide / N-type silicon heterogeneous three-state output PN junction is composed of N-type silicon wafer 1 and P-type polyacrylamide coating 2; N-type silicon wafer 1 One side of the surface is coated with a P-type polyacrylamide coating 2, and the P-type polyacrylamide coating 2 directly contacts the surface of the N-type silicon chip 1; an electrode is drawn from the inside or surface of the N-type silicon chip 1 as a cathode , the inside or surface of the P-type polyacrylamide coating 2 draws another electrode as an anode; other compositions and connection methods are the same...

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Abstract

The invention discloses a P-type polyacrylamide / N-type silicon heterogeneous three-state output PN (Positive-Negative) junction, a preparation method thereof and a diode using the same, relating to semiconductor electronic parts and components and solving the problems that the traditional PN junction and the diode using the traditional PN junction has no stable, identifiable and transmissible three-state direct output performance for unidirectional current. The PN junction consists of an N-type silicon wafer and a P-type polyacrylamide coating on the surface of one side of the N-type silicon wafer. The preparation method of the PN junction comprises the following steps of: directly coating a P-type polyacrylamide aqueous solution on the surface of the N-type silicon wafer; and obtaining the P-type polyacrylamide coating after the P-type polyacrylamide aqueous solution on the surface of the N type silicon wafer is dry. The diode consists of one PN junction and two electrodes; and the electrodes are respectively led out from the inside or the surface of the P-type polyacrylamide coating and the inside or the surface of the N-type silicon wafer. For unidirectional current, the volt-ampere characteristic of the PN junction shows threes states of cut-off, constant-current and breakover, and the characteristic can be used for structuring a multiple-valued algebraic operation unit and a multiple-valued logic unit.

Description

technical field [0001] The invention relates to semiconductor electronic components, in particular to a PN junction and a diode using the PN junction. Background technique [0002] Tracing back the development of modern electronic technology and computer technology, it can be said that it originated from the invention of a basic structure in the semiconductor field, that is, the PN junction. The PN junction has unidirectional rectification characteristics, that is, when the voltage applied across the PN junction changes, the PN junction can give two stable states of cut-off and conduction. It is this characteristic derived from the material itself that promotes the progress of human civilization. , And trigger the industrial revolution - the information revolution. However, the existing PN junction can only directly output two stable, identifiable, and transferable states for unidirectional current, and integrated circuits made using the traditional PN junction principle ca...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/30H01L51/40
Inventor 徐仲晖穆长生
Owner HEILONGJIANG UNIV