Bending and forming method of thin silicon wafer

A technology of bending and forming silicon wafers, which is applied in the fields of technology for producing decorative surface effects, decorative art, gaseous chemical plating, etc., can solve the problems of uncontrollable external force forming, easy breakage of silicon wafers, and damage of silicon wafers, etc., to achieve Good bending effect, beneficial to automation, and avoiding damage

CN102070119BInactive Publication Date: 2012-11-07DALIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2012-11-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a bending and forming method of a thin silicon wafer, which scans the thin silicon wafer by utilizing Nd:YAG pulse laser and provides power and temperature conditions for bending the thin silicon wafer by thermal action of laser and a thin silicon wafer material. In the bending and forming method, extra temperature environment does not need to be provided in the stage of laser scanning, the bending and forming mainly utilize the thermal action of the laser and the thin silicon wafer material to realize the plastic characteristic of the silicon wafer, and further are realized by stress difference generated by different temperatures on the upper surface and the lower surface. In the bending and forming method, 1064nm pulse laser is utilized to realize bending and forming of the silicon material with the thickness being 0.1mm-0.3mm, a 30-degree bending angle can be obtained, the bending quality is good, simultaneously, the operation is convenient, and the technology is simple, so that the bending and forming method is beneficial to realizing automatization. The laser bending technology adopted by the invention belongs to a non-contact processing form, has no contact damage to the surface of the material, and can effectively avoid damage caused by being contacted with external force in the bending process of the silicon wafer.
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Description

technical field

[0001] The invention relates to a manufacturing technology of a semiconductor device, in particular to a method for bending and forming a thin silicon wafer. Background technique

[0002] With the development of optoelectronic technology, semiconductor devices have not only satisfied the manufacture of plane dimensions, but also increased the demand for complex curved surfaces, especially the application of warped thin silicon beams. Therefore, we are required to use traditional micro-thickness planar structure devices for further processing. At this time, the thickness of the semiconductor silicon material is relatively thin. If the traditional external force forming method is used, the material will easily be damaged. Therefore, external force forming must be carried out under high temperature conditions; while the traditional chemical etching method is used to realize the bending process. The manufacturing cycle is longer and the control is difficult. Lar...

Examples

Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings. Such as Figure 1-2 As shown, a method for bending and forming a thin silicon wafer uses a laser beam 3 with a wavelength of 1064 nm output by a Nd:YAG pulsed laser to scan the silicon wafer, and the thin silicon wafer is formed by the thermal action of the laser beam 3 and the material of the thin silicon wafer 5. Sheet 5 is bent to provide power and temperature conditions, specifically including the following steps:

[0025] A. Select a thin silicon wafer 5 with a length of 2 to 10 mm and a thickness of 0.1 to 0.3 mm to be scanned, and clean it with deionized water;

[0026] B. Install the thin silicon wafer 5 on the pre-adjusted workbench, and fix one end of it with the fixture 6; select the pulse width of the Nd:YAG pulsed laser between 1 and 10ms, and adjust it through the online video system 1 The focus lens 2, after determining the laser beam focal position 4, m...