Preparation method of bent silicon nanowire array with changeable direction
A technology of silicon nanowire array and direction change, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc.
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Embodiment 1
[0036] The oriented silicon wafers were cleaned with distilled water, ethanol and acetone in sequence, and finally rinsed with distilled water, and immersed in HF and AgNO 3 Mixed silver plating solution for 2 minutes, where the AgNO in the silver plating solution 3 The concentration is 5mM, and the concentration of HF is 4M; take it out and rinse it, and immerse it in the etching solution at 40°C in a closed container for etching; among them, the etching solution is 10mL of HF is 4.8M, H 2 o 2 0.1M mixed solution, HF and H 2 o 2 The molar ratio is 48. After 10 minutes, the silicon nanowire array is etched on the silicon wafer with the crystal orientation; 2 o 2 It is a mixed solution of 0.02M, so that the HF in the etching solution is 4.8M, and the H 2 o 2 0.06M, HF and H 2 o 2 The molar ratio is 80, and the temperature of the etching solution is 40°C and the etching is continued for 30 minutes, so that the above-etched silicon nanowire array continues to be etched ...
Embodiment 2
[0038] The oriented silicon wafers were cleaned with distilled water, ethanol and acetone in sequence, and finally rinsed with distilled water, and immersed in HF and AgNO 3 Mixed silver plating solution for 2 minutes, where the AgNO in the silver plating solution 3 The concentration is 5mM, and the concentration of HF is 5M; take it out and rinse it, and immerse it in the etching solution at 10°C in a closed container for etching; among them, the etching solution is 4mL, HF is 4.0M, H 2 o 2 0.2M mixed solution, HF and H 2 o 2 The molar ratio is 20. After 10 minutes, the silicon nanowire array is etched on the silicon wafer with the crystal orientation; , H 2 o 2 0.03M, HF and H 2 o 2 The molar ratio is 130, and the etching is continued for 1 hour at the temperature of the etching solution at 40°C, so that the above-etched silicon nanowire array continues to be etched and extended, and the direction of the newly etched silicon nanowire array is changed once. ;Take ou...
Embodiment 3
[0040] The oriented silicon wafers were cleaned with distilled water, ethanol and acetone in sequence, and finally rinsed with distilled water, and immersed in HF and AgNO 3 Mixed silver plating solution for 2 minutes, where the AgNO in the silver plating solution 3 The concentration is 5mM, and the concentration of HF is 5M; take it out and rinse it, and immerse it in the etching solution at 40°C in a closed container for etching; among them, the etching solution is 20mL of HF is 4.8M, H 2 o 2 0.02M mixed solution, HF and H 2 o 2 The molar ratio is 240. After 25 minutes, the silicon nanowire array is etched on the silicon wafer with the crystal orientation; then add 0.4mL H to the etching solution 2 o 2 , so that the HF in the etching solution is 4.8M, and the H 2 o 2 0.22M, HF and H 2 o 2 The molar ratio is 22, and the etching is continued for 10 minutes at the temperature of the etching solution at 40°C, so that the above-etched silicon nanowire array continues to...
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