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Method for removing photoresist

A photoresist and atomic emission spectroscopy technology, applied in the field of photoresist removal, can solve problems such as operator safety hazards and wafer damage, and achieve the effects of reducing safety hazards, reducing damage, and shortening processing cycles.

Active Publication Date: 2013-07-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] In the process of realizing the present invention, the inventors found that after using the ashing process of the degumming machine to remove the glue, and then adopting RCA wet chemical cleaning, although the cleaning efficiency can be improved, in the process of RCA wet chemical cleaning, a large amount of strong acid, strong The use of alkali and strong oxidizing agents will also pose hidden dangers to the safety of operators and may cause damage to the wafer itself

Method used

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  • Method for removing photoresist
  • Method for removing photoresist
  • Method for removing photoresist

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Embodiment Construction

[0027] The purpose of the present invention is to provide a photoresist removal method that can improve the cleaning efficiency and reduce the damage to the wafer itself when removing the photoresist. The invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0028] refer to figure 1 As shown, the method for removing photoresist in the embodiment of the present invention includes steps:

[0029] S10. Using an ashing process to remove the remaining photoresist on the wafer after plasma etching;

[0030] Wherein, the main process of the ashing process is as follows: the oxygen molecules are decomposed by radio frequency (RF) energy to generate oxygen atoms, and the oxygen atoms react with the residual photoresist to generate volatile carbon monoxide, carbon dioxide, water and other main products, the reaction formula as follows:

[0031] e+O 2 →2O+e

[0032] R * +O * → CO or CO 2

[0033] These products are sucked away ...

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Abstract

The invention discloses a method for removing a photoresist, which relates to the field of manufacturing of an integrated circuit element and is invented to solve the problems of long operating period for removing the photoresist and easy damage to a chip in a photoresist removing process. The method for removing the photoresist comprises the following steps of: removing residual photoresist froma plasma-etched chip by adopting an ashing process; cleaning the chip with a hydrofluoric acid solution; flushing the chip with ultrapure water or deionized water; and soaking the chip in an isopropanol solution. The method is suitable for removing photoresist produced in a semiconductor chip manufacturing process.

Description

technical field [0001] The invention relates to the field of integrated circuit element manufacturing, in particular to a method for removing photoresist produced in semiconductor wafer manufacturing. Background technique [0002] In the manufacturing process of semiconductor wafers (usually silicon wafers), in order to ensure the process effect, the wafer must be clean and free of particles. In the wafer manufacturing process, etching of pattern sheets with photoresist (Photoresist) patterns is a very frequent and important step. After plasma etching of photoresist wafers, many By-products such as Si-Cl 2 -O / Si-Br 2 -O / CF x and other substances. These substances mainly exist in the form of photoresist residues, which will become passivations on the surface of the wafer pattern or even the sidewall, pollute the wafer, and then affect the next step of the process, and even lead to the final defect of the device, so that the device cannot achieve As designed device charac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3105
Inventor 杨峰谭宗良
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD