Radio frequency silicon-on-insulator complementary metal oxide semiconductor low-noise amplifier

Abstract

The invention discloses a partially-depleted silicon-on-insulator complementary metal oxide semiconductor process full chip integration-based low-noise amplifier which works at center frequency of 2.4GHz and has electrostatic protection. The amplifier has a cascode structure with source negative feedback; a clamp diode and a voltage clamp system in a circuit exert a good electrostatic protection effect; and when the low-noise amplifier works normally, the power gain is 13 decibels, the noise coefficient is 2.6 decibels, and the input echo loss is 13 decibels when the power consumption is 6.5 milliwatts. The amplifier has an electrostatic protection level which reaches 0.8 to 0.9 ampere, and the pulse current of a transmission line is 1.4 amperes. The low-noise amplifier has the advantages of low power consumption, high electrostatic protection capacity and good matching of noise, gain and input / output.

Description

technical field [0001] The invention relates to the technical field of radio frequency integrated circuit design, in particular to a full-chip integration of a partially depleted silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) with a central frequency of 2.4 GHz and an electrostatic protected low noise amplifier. Background technique [0002] With the rapid development of national electronic technology and the huge demand for low-cost high-speed mixed-signal integrated systems, people are trying to transfer several high-frequency basic circuit modules from GaAs to CMOS silicon technology. In the past decade, in order to improve the performance of devices such as cut-off frequency, the channel length of metal-oxide-semiconductor (MOS) tubes has shrunk to the deep submicron level. [0003] Due to the large junction capacitance and large on-current of devices made by traditional silicon technology, the cut-off frequency is low and the power consumptio...

AI Technical Summary

Problems solved by technology

High-frequency radio frequency circuits are highly sensitive to parasitic effects and traditional ESD protection methods. When high-frequency radio frequency circuits are applied to radio frequency devices, impedance mismatch or loss may result, resulting in signal reflection, gain reduction, bandwidth reduction, and noise figure increase. Large, etc., so the performance of low-noise amplifiers made by traditional silicon processes will not be very good

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