Method for oriented growth of one-dimensional inorganic nanowire array on metal substrate

Abstract

The invention discloses a method for preparing a one-dimensional inorganic nanowire array in a large area on a metal substrate. The method comprises the following steps of: 1) putting a precursor into a container, putting the container into a high temperature area of a vacuum tube type stove, putting the metal substrate into the container, putting the container into a low temperature area of the vacuum tube type stove, which is 10 to 20cm away from the center of the high temperature area, making a furnace chamber of the vacuum tube type stove in an anaerobic state, filling non-oxidative protective gas into the furnace chamber until the pressure is 1*10<3>Pa, and sealing the vacuum tube type stove; and 2) raising the temperature at a rate of 10-20DEG C / minute, heating the high temperature area of the vacuum tube type stove to reach the evaporating temperature of the precursor, keeping the temperature for 30 to 300 minutes, naturally cooling to room temperature, and obtaining the vertically grown one-dimensional inorganic nanowire array on the metal substrate. By combining the chemical vaporous deposition, a Langmuir-Blodgett (LB) self-assembly technique and a catalyst fixed-point catalytic growth technique, the large-area one-dimensional inorganic nanowire array is prepared on the metal substrate by one step, and the method is suitable for growing various inorganic material arrays.

Description

technical field [0001] The invention relates to a preparation method of a one-dimensional inorganic nanometer material array, more specifically, the invention relates to a method for directional growth of a one-dimensional inorganic nanowire array on a metal substrate by a one-step method. Background technique [0002] In recent years, due to the potential important applications of semiconductor nanostructure arrays in functional nanoelectronic devices, logic gates and biosensing, the preparation research work has received extensive attention. At present, there are several important methods for the preparation of semiconductor (silicon) nanowire arrays: LB self-assembly method, catalyst fixed-point growth method and metal-catalyzed chemical etching method. Although they each have their own advantages, they also have limitations. The LB self-assembly method cannot make the uneven vertical nanowires form an array; the catalyst fixed-point growth method is also prone to lodgin...

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Problems solved by technology

The LB self-assembly method cannot make the uneven vertical nanowires form an array; the catalyst fixed-point growth method is also prone to lodging due to the influence of the convective disturbance of the carrier gas in the growth system, and it is not easy to grow and prepare a large area, and this growth method is not easy. Realized on the metal surface; metal-catalyzed chemical etching technology is not conducive to the research and utilization of surface properties due to the high price of the original semiconductor (silicon) required, and the obtained nanowire surface has many defects and is not very smooth.

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