Preparation process of light electronic packaging material

A technology for electronic packaging materials and preparation processes, which is applied to the improvement of process efficiency, circuits, electrical components, etc., can solve the problems of high cost and complex preparation process, and achieve the effect of low cost, simple process and reduction of thermal expansion coefficient.

Inactive Publication Date: 2011-07-27
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the methods for preparing high-silicon-aluminum electronic packaging materials mainly include powder metallurgy and spray deposition, but these two preparation processes are relativ

Method used

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  • Preparation process of light electronic packaging material
  • Preparation process of light electronic packaging material
  • Preparation process of light electronic packaging material

Examples

Experimental program
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Example Embodiment

[0022] Example 1

[0023] The industrial pure aluminum and high-purity silicon are smelted in a vacuum induction furnace at 830℃ according to the mass ratio of 7:3 (Al-30%Si), melted evenly, and cast into a metal mold with a diameter of 60mm to make aluminum silicon. Great, the length is 1m; the mass percentage is 21% Na 3 AlF 6 , 27% NaCl, 52% KCl are mixed uniformly, kept at 550°C for 6 hours as electroslag slag material, and kept in the oven until the electroslag treatment is taken out to ensure dryness; put the consumable electrode into the electroslag The slag furnace is used for smelting, the working voltage of the electroslag furnace is 40V, the working current is 1.5kV, the arc ignition block is pure aluminum, and the arc ignition slag material is CaF 2 In the smelting process, add electroslag slag material as needed until the electroslag process is completed; the aluminum-silicon ingots rapidly solidified by the water-cooled crystallizer after electroslag smelting are ann...

Example Embodiment

[0024] Example 2

[0025] Industrial pure aluminum and high-purity silicon are smelted in a vacuum induction furnace at 1040℃ at a mass ratio of 1:1 (Al-50%Si), melted evenly, and cast into a metal mold with a diameter of 60mm to make aluminum silicon. Great, the length is 1m; the mass percentage is 23% Na 3 AlF 6 , 25% NaCl, 52% KCl are mixed uniformly, kept at 550°C for 7 hours as the electroslag slag material, and kept in the oven until it is taken out before the electroslag to ensure dryness; the consumable electrode rod is loaded into the electroslag The furnace is smelted, the working voltage of the electroslag furnace is 40V, the working current is 2kV, the arc pilot block is pure aluminum, and the arc slag material is CaF 2 In the smelting process, add electroslag slag material as needed until the electroslag process is completed; after the electroslag is smelted, the aluminum-silicon ingot rapidly solidified by the water-cooled crystallizer is annealed at 340℃ for 4 hours...

Example Embodiment

[0026] Example 3

[0027] Industrial pure aluminum and high-purity silicon are smelted in a vacuum induction furnace at 1160°C at a mass ratio of 2:3 (Al-60%Si), melted evenly, and cast into a metal mold with a diameter of 60mm to make aluminum silicon. Great, the length is 1m; the mass percentage is 25% Na 3 AlF 6 , 27% NaCl, 48% KCl are mixed uniformly, kept at 550°C for 6 hours as electroslag slag material, and kept in the oven until it is taken out before the electroslag to ensure dryness; the consumable electrode rod is loaded into the electroslag The furnace is smelted, the working voltage of the electroslag furnace is 40V, the working current is 2.5kV, the arc pilot block is pure aluminum, and the arc slag material is CaF 2 The electroslag slag material is continuously added during the smelting process until the electroslag process is completed; after the electroslag is smelted, the aluminum-silicon ingot rapidly solidified by the water-cooled crystallizer is annealed at 36...

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Abstract

The invention discloses a preparation process of a light electronic packaging material which consists of aluminum and silicon, wherein the content of silicon in mass percent is 30-80% and the balance is aluminum. The process comprises the steps of: mixing the aluminum and the silicon and then placing the mixture in a vacuum induction furnace for smelting at a temperature of 800-1300 DEG C so as to obtain a consumable electrode bar; loading in an electric slag furnace for electric slag smelting, wherein the work voltage of the electric slag furnace is 20-40V, the work current is 1-10kA, the arc strike block is a pure aluminum block and the arc strike slag is CaF2; adding electric slag which is thermally insulated for 4-8h at a temperature within 500-800 DEG C in the smelting process, wherein the addition of the electric slag is 3-4% of the quality of the consumable electrode bar and the electric slag consists of 20-30% of Na3A1F6, 25-35% of NaC1 and 45-55% of KC1 in mass percent; and annealing the aluminum-silicon cast ingot which is rapidly solidified by a water cooling crystallizer for 3-5h at a temperature within 325-375 DEG C after the smelting of the electric slag.

Description

technical field [0001] The invention relates to a preparation process of a lightweight electronic packaging material. The material is high-silicon aluminum and belongs to the field of electronic packaging. Background technique [0002] In recent years, electronic equipment has developed towards high speed, small size, high power, and high reliability, semiconductor devices have developed towards high integration, large-scale, multi-chip, and high power, and circuit wiring has rapidly developed towards micro, short-term, and low resistance. In order to make the computer run faster, more lines need to be arranged on the integrated circuit substrate, which will lead to a substantial increase in the heat generated per unit volume of the integrated block, and the power transmitted by each substrate will also be greatly increased. If the heat cannot be dissipated quickly through the packaging structure such as the substrate, it will be difficult for the integrated block to work no...

Claims

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Application Information

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IPC IPC(8): C22B9/18C22C21/02C22C28/00C22F1/043C22F1/16H01L23/28
CPCY02P10/25
Inventor 薛烽刘欢周健白晶孙扬善
Owner SOUTHEAST UNIV
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