Method for forming copper interconnected structure and CMP (Chemical Mechanical Polishing) equipment for same

Abstract

The invention provides a method for forming a copper interconnected structure and CMP (Chemical Mechanical Polishing) equipment for the same. The method comprises the following steps of: providing a silicon chip (8) obtained by using a copper chemical mechanical polishing method, wherein the silicon chip (8) is provided with a silicon substrate (10) and an interlaminar dielectric layer (12) covering the silicon substrate (10), the interlaminar dielectric layer (12) is provided with an interconnected groove and / or through hole with an upward opening, a copper metal (18) is embedded into the interconnected groove and / or through hole, a diffusion blocking layer (14) is arranged between the copper metal (18) and the interlaminar dielectric layer (12), and the interlaminar dielectric layer (12) is made of a dielectric material with the dielectric constant of 2.2-2.75; annealing the silicon chip (8); and cooling to form the copper interconnected structure.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for forming a multilayer copper interconnection structure that can improve device stability. The invention also relates to a CMP device for carrying out the method. Background technique [0002] With the development of integrated circuit manufacturing technology, the requirements for the integration density of semiconductor devices are increasing. With the introduction of multi-layer metallization technology into the integrated circuit manufacturing process in the 1970s, the vertical space of the semiconductor wafer has been effectively utilized, and the integration level of the device has been significantly improved. Metallization is the process of depositing a metal film on an insulating dielectric film during chip manufacturing and then patterning it to form interconnected metal lines and hole-filling plugs for integrated circuits. For traditional...

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Problems solved by technology

[0009] However, in the current multilayer interconnect structure composed of copper / low κ materials, there are still reliability problems such as low breakdown voltage, and its device stability still needs to be further improved, so it is still necessary to use copper / Improve the formation method of multilayer interconnection structure composed of low κ materials

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