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Manufacturing method of back contact battery in low ohmic contact

A back-contact battery and ohmic contact technology, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems affecting conversion efficiency and high contact resistance, and achieve improved conversion efficiency, low production cost, and easy implementation. Effect

Inactive Publication Date: 2013-05-01
TIANWEI NEW ENERGY YANGZHOU +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the contact resistance of the back contact battery is relatively high, which affects the conversion efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Through the examples, the technical solution of the present invention is described in detail, but the protection scope of the present invention is not limited to the examples.

[0017] A method for manufacturing a low-ohm contact back-contact battery, comprising steps in sequence: testing and inspection of silicon wafers, pre-cleaning of silicon wafers, removing damaged layers, depositing SiN layers on one side, making small textured surfaces on one side, and silk screening on the side of the SiN film Print masking film, etch N on the side of SiN film + Layer window, front and back diffuse N at the same time + layer and form phosphosilicate glass barrier layer, remove SiN layer, P + layer diffuses and forms a passivating SiO 2 Layer thin film, screen printing lead hole masking film, etch lead hole while removing the front phosphosilicate glass and SiO 2 layer, evaporated titanium film, deposited SiN layer on the front, screen printed positive and negative electrodes,...

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PUM

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Abstract

The invention discloses a manufacturing method of a back contact battery in low ohmic contact, which sequentially comprises the steps of silicon wafer test verification, silicon wafer precleaning, damaged layer removing, SiN layer deposition at single face, small texture manufacturing at single face, mask membrane screen printing at SiN membrane side, N+ layer window corrosion at the SiN membraneside, simultaneous N+ layer diffusion at front and back faces and phosphorosilicate glass barrier layer formation, SiN layer removing, P+ layer diffusion to form a passivation SiO2 thin film, lead hole mask membrane screen printing, lead hole corrosion and front-faced phosphorosilicate glass as well as the SiO2 layer removing, titanium film evaporation, SiN layer deposition at the front face, negative and positive electrode screen printing, negative and positive electrode drying and sintering, testing and sorting and warehousing. The back contact battery manufactured by the method has the advantages that the contact resistance of the back battery is reduced by evaporating the titanium film, the conversion efficiency of the battery is improved, the implementation is convenient through conventional process in the steps, the production cost is low, and the popularization and application of the back contact battery are convenient.

Description

technical field [0001] The invention relates to a photovoltaic cell, in particular to a method for manufacturing a low-ohm contact back contact cell. Background technique [0002] At present, compared with the cost of thermal power generation, the cost of photovoltaic power generation is too high, which is the main obstacle restricting the large-scale application of photovoltaic power generation. The development of a new generation of high-efficiency and low-cost solar cells, so that the cost of power generation is close to or equal to the cost of thermal power, has great practical and long-term significance for solving the current problems of energy shortage and environmental pollution, and realizing sustainable development of the national economy and society. [0003] At present, the quality of silicon wafers is gradually improving, and the efficiency of conventional cells is 17.5-18.2%, which can be achieved in most factories. SE battery is relatively easy to get the att...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCY02P70/521Y02P70/50
Inventor 张勇刘红成姜红燕王玉亭李忠
Owner TIANWEI NEW ENERGY YANGZHOU