Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor memory device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the field of semiconductor memory device and semiconductor memory device manufacturing, can solve problems such as poor compatibility of logic circuits, and achieve the effects of simple process, stable process and improved compatibility

Active Publication Date: 2015-02-25
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Although the use of recessed channel semiconductor memory devices achieves a longer data retention time, it has poor compatibility with logic circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor memory device and manufacturing method thereof
  • Semiconductor memory device and manufacturing method thereof
  • Semiconductor memory device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Also in the following description, the terms wafer and substrate used may be unde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor memory device, which comprises a source, a drain, a floating gate region, a control gate, a planar channel region and a gate controlled diode, wherein the gate controlled diode is used for connecting the floating gate region and the drain; and in the semiconductor memory device, the floating gate region is used for memorizing information, the gate controlled diode is used for connecting a floating gate and a substrate, and the floating gate is charged or discharged by the gate controlled diode. The semiconductor memory device is manufactured by using a self-alignment process, and the process is simple and stable; and in the invention, manufacturing of a logic circuit and a flash memory device is compatible by using a planar channel structure.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a semiconductor memory device; the invention also relates to a manufacturing method of the semiconductor memory device. Background technique [0002] Semiconductor memories are widely used in various electronic products. Different application areas place different requirements on the structure, performance and density of semiconductor memories. For example, static random access memory (SRAM) has high random access speed and low integration density, while standard dynamic random access memory (DRAM) has high density and medium random access speed. [0003] Figure 1a-1c Several major existing semiconductor memory cells are shown. in Figure 1a 1b represents a 6-transistor (6-T) SRAM cell; 1c represents a 1-transistor floating body cell (FBC) memory cell. [0004] see Figure 1a , a conventional 1T-1C DRAM cell consists of a transistor 103 and a capacitor 104 . In operation, it can b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L21/8247
Inventor 王鹏飞刘磊刘伟
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com