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Power module and encapsulation and integration method thereof

A power module and electrode technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as affecting heat dissipation performance, increase parasitic parameters, etc., and achieve the goal of reducing parasitic parameters, short connection distance, and improving heat dissipation performance and power efficiency. Effect

Inactive Publication Date: 2011-08-31
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the present invention provides a power supply module and its packaging and integration method to solve the problem of increasing parasitic parameters and affecting heat dissipation performance and power supply efficiency in the prior art by using a gold wire bonding connection method, and simplifying the interconnection method

Method used

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  • Power module and encapsulation and integration method thereof

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Embodiment Construction

[0040] In order to enable those skilled in the art to better understand the solutions of the embodiments of the present invention, the embodiments of the present invention will be further described in detail below in conjunction with the drawings and implementations.

[0041] Aiming at some problems existing in power modules in the prior art using gold wire or copper wire bonding connection, an embodiment of the present invention provides a power module, including: a lead frame, a passive device, an IC and a MOSFET. The above-mentioned passive components include passive components such as power inductors, input capacitors, output capacitors, and resistors, and these passive components are welded on the lead frame through surface mount technology. In the embodiment of the present invention, the IC is a flip chip, which is mounted and welded on the lead frame by a flip chip technology. IC can be used as the driving chip of MOSFET.

[0042] In a power module, two MOSFETs are usu...

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Abstract

Disclosed are a power module and an encapsulation and integration method thereof. The power module comprises: a lead frame, a passive device, an integrated circuit (IC) and a power switch Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), wherein the passive device is welded on the lead frame by Surface Mount Technology (SMT), the IC is a flip chip which is mounted and welded on the leadframe.

Description

technical field [0001] The invention relates to the technical field of power supply equipment, in particular to a power supply module and a package integration method thereof. Background technique [0002] The main components of the power module include a power switch, a control IC (Integrated circuit, integrated circuit), an input capacitor, an output capacitor, a power inductor, and resistors and capacitors for signal processing. The commonly used power switch is MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) or IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor), and the control IC can be a driver chip, or PWM (Pulse Width Modulation, pulse width modulation) control chip, or a combination of both. At present, both power supply and semiconductor manufacturers are developing packaging integration technology for power modules. The integration solutions of power supply manufacturers and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L21/50H01L21/60
CPCH01L24/29H01L2924/01058H02M7/003H01L2224/16245H01L2924/19105H01L2224/73253H01L2924/01015H01L24/92H01L24/30H01L2224/45124H01L2224/30181H01L2924/01006H01L2224/73263H01L2924/19041H01L2924/3011H01L2924/13055H01L24/16H01L2224/45147H01L2924/01079H01L25/16H01L23/49575H01L23/49562H01L2924/14H01L2224/32245H01L23/49541H01L24/73H01L2224/73255H01L2924/01082H01L2224/73204H01L23/3107H01L2224/92125H01L2224/2919H01L2924/01013H01L2224/45144H01L2924/19042H01L2924/13091H01L2224/06181H01L2224/131H01L24/34H01L2924/30107H01L23/49524H01L2924/014H01L2224/29111H01L2924/01029H01L2924/19043H01L24/32H01L2924/01033H01L2924/00014H01L2924/1306H01L2924/1305H01L2224/0401H01L2924/15747H01L2224/45015H01L2224/40245H01L24/40H01L2224/84801H01L2224/37124H01L2224/37147H01L2224/8385H01L2224/8485H01L24/37H01L2224/83801H01L24/84H01L2924/00H01L2924/00015H01L2224/48H01L2924/207H01L2224/73221H01L27/00H01L21/77
Inventor 毛恒春陈锴段志华周涛
Owner HUAWEI TECH CO LTD
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