High voltage ceramic capacitor dielectric sintered at low temperature

Abstract

The invention relates to the technical field of inorganic nonmetallic materials, in particular to a high voltage ceramic capacitor dielectric sintered at the low temperature of 930 to 980 DEG C. The lead-free and cadmium-free high dielectric high voltage ceramic capacitor dielectric is prepared from ordinary chemical raw materials of capacitor ceramics by adopting a conventional ceramic capacitordielectric preparation method, and the sintering temperature of the capacitor ceramics can be greatly reduced. The dielectric is suitable for the preparation of a monolithic ceramic capacitor and a multilayer chip ceramic capacitor, can greatly reduce the cost of the ceramic capacitor, simultaneously improve voltage resistance to widen the application range of the ceramic capacitor, and avoid environmental pollutions in preparation and using processes.

Description

technical field [0001] The invention relates to the technical field of inorganic non-metallic materials, in particular to a low-temperature sintered (sintering temperature of 930-980°C) high-voltage ceramic capacitor dielectric, which adopts a conventional preparation method for ceramic capacitor dielectrics and uses common chemical raw materials for capacitor ceramics to prepare non-metallic capacitors. Lead and cadmium-free high-voltage ceramic capacitor dielectric can also greatly reduce the sintering temperature of capacitor ceramics. This medium is suitable for the preparation of monolithic ceramic capacitors and multilayer ceramic capacitors, which can greatly reduce the cost of ceramic capacitors. At the same time, it can improve Withstand voltage to expand the application range of ceramic capacitors, and do not pollute the environment during preparation and use. Background technique [0002] Color TV, computer, communication, aerospace, missile, navigation and other ...

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Problems solved by technology

[0007] Another patent is "high dielectric high performance medium temperature sintered chip multilayer ceramic capacitor ceramic material" (patent application number: 97117286.2), which is synthesized by solid phase method and simultaneously replaced by equivalent and heterovalent ions (Sr 2+ ,Zr 4+ ,Sn 4+ ,Nb 5+ ) BaTiO 3 Solid solution, add an appropriate amount of boron-lead-zinc-copper glass sintering agent to sinter the ceramic material at medium temperature. Its properties are: dielectric constant greater than or equal to 16000, and withstand voltage of 700V / mm. Although the patent has a high dielectric constant, the reported The withstand voltage of the material is too poor, only 700V / mm, and its components contain a certain amount of lead. The sintering temperature of this patent is 1080-1140°C, which is higher than that of this patent

[0008] There is another patent "Manufacturing Method of High Voltage Ceramic Capacitor Dielectric" (Patent No. 91101958.8), which uses an unconventional process to prepare the dielectric, that is, tape casting film, and then laminates the dielectric body. The disadvantage of this patent is that the preparation process is complicated, which leads to an increase in product manufacturing costs. The sintering temperature of the patented medium is 1080-1330 ° C, which is higher than that of this patent.

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