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Method for connecting target with back plate

A connection method and backplane technology, applied in welding equipment, welding equipment, laser welding equipment, etc., can solve the problems of difficult plastic deformation, high process cost, high hardness, etc., and achieve the effect of improving reliable connection

Active Publication Date: 2011-09-14
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is worth noting that this type of patent for occlusal connection through the complex surface structure of the connecting surface of the target and the back plate is mainly aimed at disc-shaped targets that are easy to process, and it is difficult to apply to targets with irregular shapes.
Another problem is that if the target and the back plate are materials with high hardness and difficult plastic deformation, this method cannot be used for connection
[0005] When welding by direct hot pressing or hot isostatic pressing, the process cost is high, and there are also applicable restrictions on the material types of the target and the back plate

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0028] Example 1: Welding of high-purity Al-0.5% Cu target and 6061Al alloy back plate

[0029] The Al-0.5% Cu disc-shaped target with a purity of 99.9995% and the surface of the 6061Al alloy disc-shaped back plate are processed figure 1 The holes shown, the hole distribution is as follows Image 6 As shown, the diameter of the hole is Ф8mm, the depth is 1.5mm, and the taper angle between the side and the bottom surface is 65°. The Vickers hardnesses of Al-0.5% Cu and 6061Al alloys are HV26 and HV105, respectively. Select Ф7.8×3.5mm pure aluminum rod as filling material, its hardness is HV23. Electron beam vacuum sealing welding is adopted, and the welding vacuum degree is >5×10 -2 Pa. like figure 2 , image 3 As shown, the depth of the welding seam 9 is 10 mm, and the gap 11 between the target material and the surfaces 5 and 6 to be welded of the back plate is 0.5 mm.

[0030] Press the sealed and welded target and back plate assembly, the reduction is >0.5mm, to ensu...

Embodiment 2

[0031] Example 2: Welding of high-purity Al-1%Si-0.5%Cu target and 6061Al alloy back plate

[0032] The Al-1%Si-0.5%Cu disk-shaped target with a purity of 99.9995% and the surface of the 6061Al alloy disk-shaped back plate are processed with grooves (sections such as figure 1 shown), the distribution of the annular groove is as follows Figure 7 As shown, the width of the groove is 6 mm, the depth is 3 mm, and the taper angle between the side and the bottom is 85°. The hardnesses of Al-0.5% Cu and 6061Al alloys are HV37 and HV105, respectively. Pure aluminum rings with a width of 5.8 mm and a height of 6.3 mm and different outer diameters are selected as filling materials, and their hardness is HV23. Electron beam vacuum sealing welding is adopted, and the welding vacuum degree is >5×10 -2 Pa. like Figure 4 As shown, the depth of the seam welding seam 12 is 4 mm, and the gap 11 between the target material and the surfaces 5 and 6 of the back plate to be welded is 0.3 mm....

Embodiment 3

[0034] Embodiment 3: Welding of high-purity Cu target material and oxygen-free copper backplane

[0035] Both the Cu-like triangular target with a purity of 99.9999% and the surface of the corresponding oxygen-free copper backplane are processed with holes. The shape of the target and the distribution of holes are as follows Figure 8 As shown, the diameter of the hole is Ф15mm, the depth is 2.0mm, and the taper angle between the side and the bottom surface is 75°. The hardness of high-purity Cu and oxygen-free copper are HV54 and HV56 respectively. An annealed pure copper rod of Ф14.5×4.8mm is selected as the filling material, and its hardness is HV45. Electron beam vacuum sealing welding is adopted, and the welding vacuum degree is >1×10 -2 Pa. like figure 2 , image 3 As shown, the depth of the welding seam 9 is 5 mm, and the gap 11 between the target material and the surfaces 5 and 6 of the back plate to be welded is about 0.8 mm.

[0036] Press the sealed and weld...

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Abstract

The invention discloses a method for connecting a target with a back plate, belonging to the field of manufacturing of sputtering targets. The method comprises the following steps: simultaneously processing grooves or holes with the same dimension on the surfaces of the target and back plate; superposing the surfaces of the target and back plate with the grooves or holes together; simultaneously filling a low-hardness material into the grooves or holes; welding the target and back plate into an integral body in vacuum; pressing so that the filling material in the grooves or holes is embedded into the target and back plate, and connecting the target with the back plate; and finally, carrying out heat treatment and finished product processing, thereby implementing firm connection of the target and back plate. The method disclosed by the invention is suitable for connecting various targets and back plate materials, and is also suitable for connecting targets in various shapes.

Description

technical field [0001] The invention belongs to the field of sputtering target manufacture, and in particular relates to a method for connecting a target and a back plate. Background technique [0002] Sputtering targets are widely used in high-tech industries such as integrated circuits, flat-panel displays, and solar thin-film batteries. With the increasing size of sputtering substrates and the application of new technologies and processes, the requirements for sputtering targets in terms of purity, microstructure and connection between targets and backplanes are also getting higher and higher. [0003] In the sputtering process, the target assembly, as the cathode, should first have excellent electrical conductivity. At the same time, in order to discharge the heat generated by high-energy ions bombarding the surface of the target at high speed, the target assembly should also have excellent thermal conductivity. Therefore, the connection between the target and the backp...

Claims

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Application Information

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IPC IPC(8): C23C14/34B23K15/06B23K26/12B23K26/24B23K1/008B23K26/32
Inventor 何金江高岩郭力山王欣平熊晓东尚再艳江轩
Owner GRIKIN ADVANCED MATERIALS
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