Slow wave structure based on semiconductor-filled metal waveguide structure
A technology of slow-wave structure and waveguide structure, which is applied in the field of physical electronic devices and terahertz wave devices, can solve the problems of increasing electromagnetic wave scattering loss, difficulty in manufacturing slow-wave devices, and difficulty in preparation, and achieves good loss characteristics, easy design and Processing realizes and solves the effect of difficult preparation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0029] refer to figure 1 , a slow-wave waveguide based on a semiconductor-filled metal waveguide structure, comprising a rectangular metal waveguide wall 1 , a tapered semiconductor dielectric quadrangular platform 3 and an air 2 . The length and width of the metal waveguide section are 80 and 40 . The height of the prismatic semiconductor dielectric h Unchanged along the longitudinal direction, it is 16 , only the width b It becomes smaller in the longitudinal direction, and its material is germanium. where A is the incident port of the electromagnetic wave. The present invention is a tapered waveguide structure with the same structural parameters in the waveguide direction, rather than a periodic structure, and the structure of the present invention is much simpler than other slow wave structures.
[0030] In this embodiment, when the electromagnetic wave propagates along the waveguide structure, the energy flow transmitted in the air gap layer gradually increases,...
Embodiment 2
[0032] refer to image 3 , a slow-wave structure based on a semiconductor-filled metal waveguide structure, comprising a circular metal waveguide wall 1 , an air 2 and a tapered gallium arsenide semiconductor strip 3 . The radius of the gallium arsenide semiconductor dielectric changes from the longitudinal direction, R 1 =0.23mm,R 2 =0.21mm,L=12mm,R 0 =0.4mm.
[0033] Electromagnetic waves from the wider port of the semiconductor A incident, propagates along the waveguide. Due to the wider semiconductor near the port, the guided wave has a large group velocity. With the propagation of the guided wave, the average energy flow in the air is gradually close to the value in the semiconductor, the guided wave group velocity gradually decreases, and the electromagnetic wave energy gradually gathers and strengthens. It will increase to the strongest in the corresponding part of the waveguide, and electromagnetic waves of different frequencies will be enhanced in different parts...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com