High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit

Abstract

The invention discloses a high-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit, which comprises a controlled IGBT, a basic isolation driving unit U1, a redundancy isolation driving unit U2 and a switching tube unit U3, wherein the input end of U1 is connected with a driving signal Vin, and the output end of U1 is connected with the gate of the IGBT by a gate resistor R1; the input end of U2 is connected with the driving signal Vin, and the output end of U2 is connected with the input end of U3; and the two output ends of U3 are connected with the gate of the IGBT and the internal negative bias voltage end of U1 respectively. The high-power IGBT redundancy driving protection circuit provided by the invention has the advantages of reducing the internal impedance of a driving circuit in the off-state of the IGBT, rapidly releasing surging current, reducing gate voltage, preventing the false switching-on of the IGBT and ensuring the reliable switching-off of the IGBT; and when the switching frequency of the driving signal is 25,000Hz, the threshold voltage of the IGBT can be reduced within 500ns.

Description

technical field [0001] The invention relates to a high-power IGBT (insulated gate bipolar transistor, Insulated Gate Bipolar Transistor) redundant drive protection circuit. Background technique [0002] IGBT integrates the advantages of bipolar power transistor and power MOSFET, and has a series of applications such as voltage control, large input impedance, low driving power, high switching speed, low switching loss, reduced saturation voltage, high voltage resistance, and high current. Because of the advantages, it has become the preferred power device for power electronic devices such as high-power switching power supplies. [0003] The IGBT is turned on and off by charging and discharging the gate capacitance, and the charging and discharging of the gate capacitance is controlled by the gate drive resistor. Gate resistance affects switching time of IGBT, switching loss, reverse bias safe operating area, short circuit current safe operating area, EMI, dv / dt, di / dt and re...

AI Technical Summary

Problems solved by technology

This surge current flows through the gate resistor and the power expansion circuit, which may generate a high voltage due to the influence of the distributed capacitance of the IGBT drive circuit. The drop of the IGBT causes false conduction of the

In some environments, various interferences will also affect the IGBT drive circuit, causing the IGBT to be turned on incorrectly and damage the power device

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