Gallium nitride based light-emitting diode (LED) epitaxial wafer and growth method thereof

An LED epitaxial wafer, GaN-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of dielectric melting, deterioration of LED performance parameters, leakage and other problems

Inactive Publication Date: 2011-09-21
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the ESD of GaN-based LED devices, some institutions have introduced more complex device manufacturing methods (Chinese Patent Publication No. CN 1988119A), which increases the cost of device manufacturing
[0004] Electrostatic discharge will occur very quickly with a very high intensity. When the discharge current flows through the PN junction of the LED, the Joule heat generated will melt the local medium between the PN poles of the chip, causing a short circuit o

Method used

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  • Gallium nitride based light-emitting diode (LED) epitaxial wafer and growth method thereof
  • Gallium nitride based light-emitting diode (LED) epitaxial wafer and growth method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0024] Example 1

[0025] 1. Put the (0001) crystal orientation sapphire substrate into the reaction chamber, and then in H 2 In the environment, the temperature is raised to 1050°C and stabilized for 10 minutes, and the substrate is purified at high temperature.

[0026] 2. Cool down to 530°C to grow a low-temperature GaN-based buffer layer with a thickness of 20nm.

[0027] 3. The temperature is raised to 1100°C to grow non-doped gallium nitride with a thickness of 1 μm.

[0028] 4. Growth of n-type gallium nitride with a thickness of 1.5 μm at 1100°C.

[0029] 5. In N 2 The multi-quantum well layer is grown for 10 cycles in the environment, GaN barrier layer: thickness is 20nm, growth temperature is 850℃; InGaN well layer: thickness is 2nm, growth temperature is 810℃.

[0030] 6. Raise temperature to 960℃ to grow p-type Al with a thickness of 30nm 0.15 Ga 0.85 N layer.

[0031] 7. Grow p-type gallium nitride with a thickness of 150 nm at 940°C.

[0032] 8. Grow low-doped p-type In with ...

Example Embodiment

[0035] Example 2

[0036] Growth using MOCVD method: Except for step 8, the other steps are as shown in Example 1. And the 8th step is:

[0037] 8. Grow low-doped n-type In with a thickness of 2nm at 810℃ 0.1 Ga 0.9 N and 2nm highly doped n-type In 0.2 Ga 0.8 N electrode contact layer.

[0038] In this embodiment, 300×300μm made by standard chip technology 2 The chip with ITO as the transparent electrode has an ESD yield rate of 90% at 4000V.

Example Embodiment

[0039] Example 3

[0040] Use MOCVD method to grow.

[0041] 1. Put the (0001) crystal orientation sapphire substrate into the reaction chamber, and then in H 2 In the environment, the temperature is raised to 1050°C and stabilized for 10 minutes, and the substrate is purified at high temperature.

[0042] 2. Cool down to 530°C to grow a low-temperature GaN-based buffer layer with a thickness of 20nm.

[0043] 3. The temperature is raised to 1100°C to grow undoped gallium nitride with a thickness of 1.5 μm.

[0044] 4. Grow n-type gallium nitride with a thickness of 2 μm at 1100°C.

[0045] 5. In N 2 A multi-quantum well layer is grown for 5 cycles in the environment, GaN barrier layer: thickness is 20nm, growth temperature is 850°C; InGaN well layer: thickness is 1.6nm, growth temperature is 810°C.

[0046] 6. Raise the temperature to 960℃ to grow p-type Al with a thickness of 30nm 0.15 Ga 0.85 N layer.

[0047] 7. Grow p-type gallium nitride with a thickness of 150 nm at 940°C.

[0048] 8...

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Abstract

The invention provides a gallium nitride based light-emitting diode (LED) epitaxial wafer and a growth method thereof. From down to up, the structure of the epitaxial wafer successively comprises a substrate, a gallium nitride based buffer layer, a non-doped gallium nitride layer, an n type gallium nitride layer, a multi-quantum well layer, a p type AlGaN layer, a p type gallium nitride layer and a contact layer. The epitaxial wafer is characterized in that the contact layer is an n type InxGa1-xN layer, or a p type InxGa1-xN layer, wherein x is a molar coefficient and is more than 0 and less than 1. The modulated doped contact layer epitaxial structure is obtained through adding an In component and a doped layer with gradually changed concentration, thereby relieving the impact of static electricity on a gallium nitride LED and improving the tolerance capability of the LED on the static electricity. According to a standard chip process, the chip with 300*300 mu m<2> is manufactured, and the electronic static discharge (ESD) yield of the chip in reverse 4000 V is above 90%.

Description

technical field [0001] The present invention relates to an LED epitaxial wafer and a growth method thereof, in particular to a gallium nitride-based LED epitaxial wafer and a growth method thereof with improved antistatic capability, belonging to the technical field of semiconductors. Background technique [0002] Gallium nitride-based materials, including InGaN, GaN, and AlGaN alloys, are direct bandgap semiconductors, and the bandgap is continuously adjustable from 1.8 to 6.2eV. It is the preferred material for the production of high-brightness blue, green, and white LEDs, and is widely used in Full-color large-screen display, LCD backlight, signal lights, lighting and other fields. [0003] GaN LED devices generally use ITO as the electrode, because the direct contact between ITO and pGaN is generally poor, which will cause uneven current density and excessive local current density. GaN-based materials are mostly grown on sapphire substrates. Due to the large lattice mis...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32
Inventor 王东盛刘俊关秋云周德保肖志国
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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