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Nitride LED (Light Emitting Diode) structure and preparation method thereof

A technology of LED structure and nitride, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of electron leakage, reduce the internal quantum efficiency of devices, etc., and achieve the effect of improving recombination efficiency, increasing internal quantum efficiency and luminous intensity

Inactive Publication Date: 2011-09-28
ENRAYTEK OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, although the LED structure of the prior art uses an electron blocking layer, some electrons still leak from the multi-quantum well active layer, thereby reducing the internal quantum efficiency of the device.

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  • Nitride LED (Light Emitting Diode) structure and preparation method thereof
  • Nitride LED (Light Emitting Diode) structure and preparation method thereof
  • Nitride LED (Light Emitting Diode) structure and preparation method thereof

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Embodiment Construction

[0036] The structure and preparation method of the nitride LED proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0037] The core idea of ​​the present invention is to provide a nitride LED structure, which is provided with an electron blocking layer between the multi-quantum well active layer and the P-type hole injection layer. A P-type additional quantum well is added between the injection layers, and the forbidden band width of the P-type additional quantum well is greater than or equal to the forbidden band width of the potential well of the quantum we...

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Abstract

The invention discloses a nitride LED (Light Emitting Diode) structure. In the structure, a P type additional quantum well is additionally arranged between an electron blocking layer and a P type hole injection layer, and the forbidden bandwidth of the P type additional quantum well is larger than or equal to that of a potential well of a quantum well in a multi-quantum well active layer, so that the composite efficiency of electrons and holes is increased, the quantity of released electrons in the multi-quantum well active layer is further reduced, and the internal quantum efficiency and luminous intensity of a nitride LED are increased. Meanwhile, the invention also discloses a preparation method of the nitride LED structure. As the P type additional quantum well is additionally arranged between the electron blocking layer and the P type hole injection layer, and the forbidden bandwidth of the P type additional quantum well is larger than or equal to that of the potential well of the quantum well in the multi-quantum well active layer, the composite efficiency of electrons and holes is increased, the quantity of the released electrons in the multi-quantum well active layer is further reduced, and the internal quantum efficiency and luminous intensity of the nitride LED are increased.

Description

technical field [0001] The invention relates to the technical field of LED preparation, in particular to a nitride LED structure and a preparation method thereof. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers injected into the PN junction recombine with the majority carriers, releasing excess energy to cause photon emission, and the direct emission colors are red, orange, yellow, Green, blue, blue, purple light. Among them, GaN-based materials refer to GaN, InN, AlN and their ternary and quaternary compounds, which belong to direct bandgap semiconductor materials. At room temperature, their luminescent wavelengths cover near-infrared, visible and deep ultraviolet bands,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/06H01L33/00
Inventor 于洪波
Owner ENRAYTEK OPTOELECTRONICS