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Method for manufacturing current blocking layer of gallium nitride-based light-emitting diode (LED)

A technology of current blocking layer and light emitting diode, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high production cost and complex process.

Inactive Publication Date: 2011-10-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0003] There are many ways to make the current blocking layer of LED, but the process is generally relatively complicated and the production cost is relatively high.

Method used

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  • Method for manufacturing current blocking layer of gallium nitride-based light-emitting diode (LED)
  • Method for manufacturing current blocking layer of gallium nitride-based light-emitting diode (LED)
  • Method for manufacturing current blocking layer of gallium nitride-based light-emitting diode (LED)

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Embodiment

[0028] see again Figure 1 to Figure 4 As shown, the present invention provides a method for preparing a gallium nitride-based light-emitting diode current blocking layer, comprising the following steps:

[0029] Step 1: Take a GaN LED epitaxial wafer 100, which is composed of a sapphire substrate 10, N-type GaN 20, multiple quantum wells 30, AlGaN EBL 40 and P-type GaN 50 ( figure 1 middle);

[0030] Step 2: Isolating the gallium nitride LED epitaxial wafer 100 into square repeating units 101 with a size of 1000×1000um, each unit 101 is an independent LED chip;

[0031] Step 3: Perform silicon ion implantation on the central 100×100um area of ​​the upper surface of the unit 101 and form the current blocking layer 70 ( figure 2 or image 3 middle);

[0032] Step 4: Deposit a NiAgNiAu metal film on the entire upper surface of the unit 101 as the P electrode 60 ( Figure 4 Middle), the P electrode 60 covers the entire current blocking layer 70 .

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Abstract

The invention relates to a method for manufacturing a current blocking layer of a gallium nitride-based light-emitting diode (LED). The method comprises the following steps of: 1, preparing a gallium nitride LED epitaxial sheet which consists of a substrate, N-type gallium nitride, a multi-quantum well, aluminum gallium nitride EBL (Electron Blocking Layer) and P-type gallium nitride; 2, isolating the gallium nitride LED epitaxial sheet into a plurality of repeating units, wherein each unit is an independent LED chip; 3, performing surface treatment on a selected region of the upper surface of each unit to form a current blocking layer on the central region of the surface layer of the P-type gallium nitride; and 4, manufacturing an electrode P which covers the entire current blocking layer and the P-type gallium nitride on the upper surface of each unit to finish manufacturing the current blocking layer of the gallium nitride-based LED.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to the technical field of GaN-based light-emitting diode devices. Background technique [0002] GaN-based LED is an electroluminescent device, so it is necessary to make electrodes on the surface of the luminescent material, and inject current from the electrodes to drive the LED to emit light. The size of the electrode has a great influence on the photoelectric performance of the LED. On the one hand, the larger the electrode area, the easier the current injection, the more uniform the current distribution, and the lower the working voltage, which is conducive to improving the electro-optical conversion efficiency; On the one hand, the electrodes are all light-absorbing materials, and the larger the area, the larger the light-shielding surface, which will lead to a decrease in the electro-optical conversion efficiency. In order to solve this contradiction, the industry has ...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 郭恩卿伊晓燕汪炼成孙波王国宏
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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