Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nano zinc oxide wires

A technology of zinc oxide nanowires and zinc oxide, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as not being in an orderly arrangement

Active Publication Date: 2011-10-19
CHINA INSTITUTE OF ATOMIC ENERGY
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, Y.Leprince et al. in France prepared zinc oxide nanowires by electrochemical deposition in the polycarbonate surface with pore diameters of 30nm, 60nm, 100nm and 150nm nuclear track holes, but the length of the zinc oxide nanowires they prepared was only 1.5 μm, and not in an ordered array

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The technical solution of the invention will be further elaborated below in conjunction with the embodiments.

[0014] Using the 80MeV energy and 20nA current provided by the HI-13 tandem accelerator of China Institute of Atomic Energy 32 S ion irradiation 20μm thick polycarbonate film or polyester film, the irradiation density is 10 8 -10 9 piece / cm 2 . The irradiated sample was placed in a clean and dry environment for a period of time, and after cleaning with alcohol, the two surfaces of the sample were irradiated and sensitized by ultraviolet light with a wavelength of 360nm for 1 hour, so that photooxidation occurred in the latent track As a result, the track hole is deepened or widened, increasing the etching rate Vt of the track. Finally, etching is carried out in a constant temperature bath. The etching conditions are: NaOH solution, the concentration is 6mol / L-7mol / L, the temperature is 55°C-65°C, the etching time is 6min-18min, and the pore diameter is 100...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing nano zinc oxide wires by using solid nuclear track technology. In the method, through nuclear pore film with a pore diameter of 100 to 600 nanometer is used as a template, a 110-to-200-nanometer-thick gold layer is plated on one side of the nuclear pore film, and a 10-to-40-micrometer-thick copper layer is deposited on the gold layer electrochemically; then a platinum wire is used as an anode and a gold, copper substrate is used as a cathode, zinc oxide is electrochemically deposited to form zinc oxide nanowires, wherein electrolyte is mixed solution of 0.05 to 0.2mol / L KCl, 2 to 7mmol / L ZnCl2 and 3 to 8 mmol / L H2O2, the pH value is 6.5 to 7.5, the electrolysis voltage is 0.8 to 1.5V, and the electrochemical deposition time is 1 to 5 hours. The diameter of the produced zinc oxide nanowires is 100 to 600 nanometers, and the length is 5 to 8 micrometers.

Description

technical field [0001] The invention belongs to the technical field of zinc oxide, and in particular relates to a method for preparing nanometer zinc oxide wires by solid core track technology. Background technique [0002] The one-dimensional nano-zinc oxide wire material has quantum size effect, interface effect, and quantum confinement effect, and has excellent properties that other materials do not have in terms of force, electricity, light, and magnetism. At present, the method of gas-liquid-solid growth mechanism is mostly used in the preparation of nano-zinc oxide wires (see literature Huang, M.H.; Wu, Y.; Feick, H.; Tran, N.; Weber, E.; Yang, P.Adv .Mater.2001, 13, 113; and literature Kong, Y.C.; Yu, D.P.; Zhang, B.; Fang, W.; Feng, S.Q.Appl.Phys.Lett.2001, 78, 407.), or chemical vapor deposition Method (see literature Wu, J.2J.; Liu, S.2C. Adv. Mater. 2002, 14, 215.). However, most of these methods use expensive sapphire and single crystal silicon as solid substra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25B1/00B82Y40/00B82Y30/00
Inventor 倪邦发刘存兄刘超
Owner CHINA INSTITUTE OF ATOMIC ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com