Preparation method of non-volatile charge storage device, non-volatile charge storage device and application of device

Abstract

The present invention relates to a method for preparing a non-volatile charge storage device, the obtained non-volatile charge storage device and its application. The preparation method of the non-volatile charge storage device has the following specific steps: a) Deposit Al2O3 on the surface of the substrate using atomic layer chemical vapor deposition to form a tunneling layer; b) Deposit Al2O3 on the surface of the tunneling layer using atomic layer chemical vapor deposition. Deposit a layer of (HfO2)x(Al2O3)1-x thin film as a storage layer; c) Use atomic layer chemical vapor deposition to deposit a layer of Al2O3 on the surface of the (HfO2)x(Al2O3)1-x storage layer as a barrier layer. The non-volatile charge storage device includes a tunneling layer, a storage layer and a barrier layer connected in sequence. Al2O3 is used as the tunneling layer and barrier layer of the storage device, and (HfO2)x(Al2O3)1-x is used as the storage layer of the device. The invention can well improve the writing and erasing speed of the device, and at the same time, the preparation method is simple to operate and easy to control.

Description

technical field [0001] The invention relates to a non-volatile charge storage device, its preparation method and application, and belongs to the field of microelectronic materials. Background technique [0002] For decades, the development of integrated circuits has basically followed the Moore's Law predicted by Dr. Gordon E. Moore, one of the founders of Intel Corporation, in 1964: 12 to 18 months doubles, feature size shrinks times. As the feature size of devices becomes smaller and smaller, traditional floating-gate non-volatile semiconductor memory devices face serious leakage problems. The size of the tunneling layer in the floating gate memory device is continuously reduced, so that a single defect will cause all the charges stored in the polysilicon floating gate to be lost. To solve this difficult problem, polysilicon-oxide-nitride-oxide-silicon (SONOS) type semiconductor memory devices have been extensively studied. However, studies have shown that using nitri...

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Problems solved by technology

However, studies have shown that using nitride (Si 3 N 4 ) as the storage layer of the charge storage device has poor data retention performance, while the traditional SiO 2 The thickness of the tunneling layer and the barrier layer is getting thinner and thinner, and the tunneling current increases rapidly due to the quantum tunneling effect, resulting in SiO 2 The layer cannot play the role of insulating medium, and the leakage current of the device has reached an unbearable level

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