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Tunable titanium jewelry laser of 588nm yellow light pump

A 588nm, titanium sapphire technology, applied in the field of lasers, can solve the problems of harsh cooling conditions of titanium sapphire lasers, and achieve the effect of improving beam quality, improving efficiency, and reducing cooling requirements

Inactive Publication Date: 2011-11-16
TIANJIN UNIV
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Problems solved by technology

[0003] In order to fundamentally solve the problem that Ti:sapphire lasers have strict cooling conditions and meet the needs of practical applications, the present invention provides a tunable Ti:sapphire laser pumped by 588nm yellow light to minimize the heat generated by the Ti:sapphire laser itself , see the description below:

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  • Tunable titanium jewelry laser of 588nm yellow light pump
  • Tunable titanium jewelry laser of 588nm yellow light pump
  • Tunable titanium jewelry laser of 588nm yellow light pump

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] In order to fundamentally solve the problem that the Ti:Sapphire laser requires harsh cooling conditions and meet the needs in practical applications, the embodiment of the present invention provides a 588nm yellow-light-pumped tunable Ti:Sapphire laser, see figure 1 In the embodiment of the present invention, the yellow light with a wavelength of 588nm located in the right band of the absorption spectrum of the titanium sapphire (the right part of the absorption band center wavelength, 540-630nm) is used as the pumping light to pump the titanium sapphire. The advantage of this method is that since the 588nm yellow light is closer to the emission band of Ti:sapphire, the photon energy difference between the pump light and the emi...

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Abstract

The invention discloses a tunable titanium jewelry laser of a 588nm yellow light pump. The laser is characterized in that a pump light is emitted by a 808nm or 880nm laser diode pump source; the pump light are focused at the interior of an Nd:YVO4 crystal through a transmitting energy fiber and a coupling lens, population inversion is carried out, and a laser with the wavelength of 1064nm is generated under the effect of a resonant cavity composed of a resonant cavity reflector and a yellow light output lens; one-order strokes with the wavelength of 1176nm are generated when the intensity exceeds the Roman threshold value; a 588nm yellow light is generated under the effect of a yellow light frequency doubling crystal, the yellow light is focused in a titanium jewelry crystal through a coupling focus lens, pumping is carried out on the titanium jewelry crystal, and population inversion is carried out, thus generating a spontaneous radiation photon; and titanium jewelry laser oscillation is formed under the effect of the titanium jewelry laser resonant cavity composed of a titanium jewelry laser full reflection lens and an output lens, and the tunable output of the wavelength is realized through regulating the horizontal direction angle of the titanium jewelry laser full reflection lens under the effect of a dispersion element.

Description

technical field [0001] The invention relates to lasers in the field of laser technology, in particular to a 588nm yellow-light-pumped tunable titanium sapphire laser. Background technique [0002] Due to its extremely wide tunable band (600-1100nm) and excellent crystal performance, Ti:Sapphire laser has become an important gain crystal for all-solid-state tunable lasers. The disadvantage of its wide tunable wavelength is that the lifetime of the upper energy level is very short, about 3.2 μs at room temperature, and the lifetime of the upper energy level will be significantly shortened as the temperature of the crystal increases, which affects the operation of the laser. It brings great disadvantages, especially in the case of high-power pumping, its thermal effect will make the lifetime of the upper energy level shorter and easily lead to temperature quenching. The absorption band of Ti:Sapphire crystal is 400-630nm, and the absorption peak is around 490nm. Traditional Ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/091
Inventor 丁欣盛泉李斌李雪殷苏嘉史春鹏姚建铨温午麒
Owner TIANJIN UNIV
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