Method for manufacturing high-frequency acoustic self-focusing spherical probe

A self-focusing, acoustic technology, applied in the direction of ultrasound therapy, sound wave diagnosis, scientific instruments, etc., to achieve the effect of mass production, smooth surface and reliable quality

Inactive Publication Date: 2011-11-23
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a high-frequency acoustic self-focusing spherical probe, which uses chemical corrosion to reduce the human factors that affect the quality of the probe durin

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  • Method for manufacturing high-frequency acoustic self-focusing spherical probe
  • Method for manufacturing high-frequency acoustic self-focusing spherical probe
  • Method for manufacturing high-frequency acoustic self-focusing spherical probe

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0018] A method for preparing a high-frequency acoustic self-focusing spherical probe of this embodiment includes the following specific steps:

[0019] 1. Preparation of silicon nitride layer on the substrate

[0020] like figure 1 , based on a high-quality silicon wafer (single crystal orientation (100)), grow a certain thick silicon nitride (SiN) layer on the silicon wafer (thickness can be adjusted as required, such as 1-5 microns, preferably in the present embodiment 1 micron). There are many methods for preparing the silicon nitride layer in this step, such as chemical vapor deposition, ion beam enhanced deposition, magnetron reactive sputtering, etc., and chemical vapor deposition is preferred in this embodiment.

[0021] 2. Perform photolithography treatment on the silicon nitride layer to open several "windows" in the sili...

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Abstract

The invention discloses a method for manufacturing a high-frequency acoustic self-focusing spherical probe, which comprises: (1) forming a silicon nitride layer on a substrate; (2) performing photoetching treatment on the silicon nitride layer and etching a hole, namely firstly performing the photoetching treatment on the silicon nitride layer, then exposing photoresist by using an exposure protection layer and an exposing apparatus in combination, later removing excessive photoresist by washing with developing solution, and finally etching the silicon nitride layer by using reactive ion etching (RIE) and forming a hole on the silicon nitride layer; and (3) placing the treated device in solution prepared from HF, HNO3, HAC in a volume ratio of 1:4:3, applying magneton stirring for corrosion, and thus obtaining the focusing spherical probe. The high-frequency acoustic self-focusing spherical probe prepared by the invention has smooth surface and reliable quality, and can reduce human factors influencing quality of probe in production process of the acoustic self-focusing spherical probe, greatly improve uniformity of quality and meet requirements for large-scale production.

Description

technical field [0001] The invention belongs to the field of preparation of ultrasonic scanning microscopic imaging equipment, and in particular relates to a preparation method of a high-frequency (GHz) acoustic self-focusing spherical probe. Background technique [0002] In recent years, ultrasonic scanning microscope (C-SAM) has been successfully applied in the fields of electronics industry, medical biopsy and acoustic therapy, especially in packaging technology research and laboratories. Due to the non-destructive detection capability of ultrasonic wave without removing the external packaging of components, C-SAM can effectively detect the damage caused by water vapor or heat energy in the structure of electronic components, such as delamination, air holes and cracks. When ultrasonic waves travel through the medium, if they encounter materials with different densities or elastic coefficients, reflected echoes will be generated. The intensity of this reflected echo will ...

Claims

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Application Information

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IPC IPC(8): A61B8/00A61N7/00G01N29/24
Inventor 朱本鹏郭万克王自昱
Owner HUAZHONG UNIV OF SCI & TECH
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