A kind of method that solid carbon source prepares graphene

A solid carbon source, graphene technology, applied in graphene, single-layer graphene, chemical instruments and methods, etc., to achieve the effect of good operability, high quality, and good light transmission

Inactive Publication Date: 2011-11-30
无锡第六元素高科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The technical problem to be solved in the present invention is to overcome the defects of the existing graphene preparation methods, and provide a method for preparing ultra-large-area single-layer or multi-layer graphene films

Method used

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  • A kind of method that solid carbon source prepares graphene
  • A kind of method that solid carbon source prepares graphene

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The present invention adopts pyrolysis solid carbon source to form graphene film by crystallization on metal substrate, comprising the following preparation steps:

[0039] 1. Take a 20 mm square flat metal copper foil and fix it on the glass;

[0040] 2. Fix the glass sheet on the centrifugal glue machine;

[0041] 3. Spray 0.1 ml of PMMA (solid carbon source polymethyl methacrylate) on the surface of the metal substrate.

[0042] 4. Set the rotating speed of the glue machine to 500 rpm and the time to 30 minutes.

[0043] 5. Remove the metal substrate on the glass slide, and heat it to 30 degrees Celsius on a heating plate for 60 minutes.

[0044]6. The metal substrate 7 sprayed with solid carbon source is placed in the quartz tube 4;

[0045] 7. Pump the air pressure of the quartz tube 4 to the limit vacuum state 4×10 -2 Torr;

[0046] 8. Set the gas flow rate of the inert gas flow meter 2 to 5 sccm, and inject the inert gas into the quartz tube 4;

[0047] 9....

Embodiment 2

[0056] The present invention adopts pyrolysis solid carbon source to form graphene film by crystallization on metal substrate, comprising the following preparation steps:

[0057] 1. Take a 50 mm square flat metal nickel foil and fix it on a glass slide;

[0058] 2. Fix the glass sheet on the centrifugal glue machine;

[0059] 3. Spray 10 ml of PDMS (solid carbon source polydimethylsiloxane) on the surface of the metal substrate.

[0060] 4. Set the rotating speed of the glue machine to 10000 rpm and the time to 30 seconds.

[0061] 5. Remove the metal substrate on the glass slide and heat it on a heating plate at 200 degrees Celsius for 10 seconds.

[0062] 6. The metal substrate 7 sprayed with solid carbon source is placed in the quartz tube 4;

[0063] 7. Pump the air pressure of the quartz tube 4 to the ultimate vacuum state of 8×10 -2 Torr;

[0064] 8. Set the gas flow rate of the inert gas flow meter 2 to 100 sccm, and inject the inert gas into the quartz tube 4; ...

Embodiment 3

[0074] The present invention adopts pyrolysis solid carbon source to form graphene film by crystallization on metal substrate, comprising the following preparation steps:

[0075] 1. Take a 30 mm square flat metal copper foil and fix it on the glass;

[0076] 2. Fix the glass sheet on the centrifugal glue machine;

[0077] 3. Spray 5 ml of PMMA (solid carbon source polymethyl methacrylate) on the surface of the metal substrate.

[0078] 4. Set the rotating speed of the glue machine to 5000 rpm and the time to 10 minutes.

[0079] 5. Remove the metal substrate on the glass slide, and heat it to 100 degrees Celsius on a heating plate for 10 minutes.

[0080] 6. The metal substrate 7 sprayed with solid carbon source is placed in the quartz tube 4;

[0081] 7. Pump the air pressure of the quartz tube 4 to the ultimate vacuum state of 6×10 -2 Torr;

[0082] 8. Set the gas flow rate of the inert gas flow meter 2 to 50 sccm, and inject the inert gas into the quartz tube 4;

[...

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Abstract

The present invention relates to a method for preparing graphene by using solid carbon source. The method comprises heating a substrate coated by solid carbon source in protection atmosphere, and then obtaining a metal substrate deposited with graphene by cooling down. The solid carbon source is selected from organic polymer, preferably from polymethyl methacrylate and / or polydimethylsiloxane, more preferably from polydimethylsiloxane. The method for preparing graphene provided by present invention does not use explosive gas and the production process is safe and credible. Meanwhile, the size of the graphene provided by present invention can be up to a size more than 1 centimeter; the graphene is superior in quality and has good transparence; and the thickness of the graphene can be controllable from monolayer to multilayer. The monoatomiclayer graphene can be easily obtained by the method.

Description

technical field [0001] The invention relates to a preparation method of a graphene material. Background technique [0002] Graphene, English name Graphene, is a two-dimensional lattice structure in which carbon atoms are arranged in a hexagonal manner. As a single-layer carbon-atom planar material, graphene can be obtained by exfoliating graphite materials. Graphene has become the focus of scientific and industrial attention since the graphite crystal film was discovered by scientists at the University of Manchester in 2004. The thickness of graphene is only 0.335 nanometers, which is not only the thinnest among known materials, but also very firm and hard; as a simple substance, it transfers electrons faster than all known conductors and semiconductors at room temperature (graphene Electrons move at 1 / 300 the speed of light). Due to the special atomic structure of graphene, the behavior of carriers (electrons and holes) must be described by relativistic quantum mechanics...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
CPCC01B2204/32C01B31/0446C01B2204/02C01B31/04B82Y40/00B82Y30/00C01B32/184
Inventor 瞿研
Owner 无锡第六元素高科技发展有限公司
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