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non-aqueous electroless deposition

A non-aqueous solvent and solution technology, applied in circuits, electrical components, liquid chemical plating, etc., can solve problems such as oxidation

Active Publication Date: 2011-11-30
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for some metal layers, the addition of water may cause oxidation of the layer, which is undesirable

Method used

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Examples

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Embodiment 1

[0037] (Nitrate based copper plating formulation)

[0038] In this embodiment is disclosed a nitrate based copper electroplating bath formulation having a pH of 6.0, a concentration of 0.05M copper nitrate (Cu(NO 3 ) 2 ), cobalt nitrate (Co(NO 3 ) 2 ), 0.6M concentration of ethylenediamine (i.e., diamine-based complexing agent), 0.875M concentration of nitric acid (HNO 3 ), potassium bromide (ie, the halide component) at a concentration of 3 millimolar (mM), and SPS (ie, chemical brightener) at a concentration between about 0.000141M and about 0.000282M. The resulting mixture is then deoxidized using argon to reduce the likelihood of the copper plating solution becoming oxidized.

[0039] Continuing with Example 1, in one embodiment, the copper electroplating solution based on the nitrate formulation is prepared using a premixed formulation scheme involving premixing a portion of ethylenediamine with copper nitrate, nitric acid and potassium bromide as First premix soluti...

Embodiment 2

[0044] Dissolve 0.051 g of copper dichloride (CuCl) in 4 milliliters (ml) of dimethylsulfoxide (DMSO) 2 ). Do this with gentle heating to speed up dissolution. It should be understood that CuCl 2 It is an anhydrous compound. Then, 0.2 to 0.7 ml of concentrated hydrochloric acid was added to the mixture. It should be understood that the hydrochloric acid used was also anhydrous. In one embodiment, acetic acid may be used in place of hydrochloric acid, as described below. Next, 11.45 moles (M) of 0.63 mL of ethylenediamine were added. Here, the above-mentioned solution is referred to as solution A. The second solution, called solution B, consisted of 0.214 g of CoCl dissolved in (6-X) mL of DMSO 2 Prepared, where X is the amount of hydrochloric acid used in the preparation of solution A. Here again, gentle heating is used to accelerate dissolution. It should be understood that CoCl 2 It is the anhydrous form of matter. In one embodiment, solution A is degassed by argo...

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Abstract

A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Description

[0001] claim priority [0002] This application, filed December 15, 2006, is a continuation of, and claims priority to, U.S. Patent Application Serial No. 11 / 611,316, entitled "Apparatus for Applying a Plating Solution for Electroless Deposition" Application No. 11 / 611,316 is U.S. Patent 7,306,662, filed May 11, 2006 entitled "Electroplating Bath for Electroless Copper Deposition" and filed June 28, 2006 entitled "Electroplating Bath for Electroless Copper Deposition" Electroplating Baths for Electrolytic Copper Deposition" continued in part of US Patent 7,297,190. The disclosure of each of the above applications is incorporated herein by reference in its entirety. Background technique [0003] The fabrication of semiconductor devices such as integrated circuits, memory cells, and the like involves a series of fabrication operations that define features on semiconductor wafers ("wafers"). The wafer includes integrated circuit devices in the form of multilayer structures defi...

Claims

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Application Information

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IPC IPC(8): H01L21/208H01L21/28
CPCC23C18/40C23C18/48H01L21/288H01L21/28
Inventor 埃乌格纽斯·诺尔库斯简·雅西奥斯基内耶兹迪·多尔迪
Owner LAM RES CORP