Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fabrication method of silicon-based thin film solar cell integrated inline module on flexible substrate

A technology of solar cells and silicon-based thin films, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of complex splicing of components, large sheet resistance, and poor light transmission performance, so as to simplify complexity and increase open circuit voltage , The effect of accelerating the process of industrialization

Inactive Publication Date: 2011-12-07
SHANGHAI INST OF SPACE POWER SOURCES
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above problems, the purpose of the present invention is to provide a method for preparing an integrated inline component of silicon-based thin-film solar cells on a flexible substrate, so as to solve the problems of high sheet resistance, poor light transmission performance and complex splicing of solar cells in the prior art. technical issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of silicon-based thin film solar cell integrated inline module on flexible substrate
  • Fabrication method of silicon-based thin film solar cell integrated inline module on flexible substrate
  • Fabrication method of silicon-based thin film solar cell integrated inline module on flexible substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Put the polyimide substrate into the ethanol solution, ultrasonically vibrate for 15 minutes, and vibrate three times. Dry the cleaned polyimide substrate with nitrogen, put it into the magnetron sputtering equipment, and bake it in a high vacuum state at 400°C for one hour; The zinc oxide layer is sputtered in high vacuum at 200°C, and the total thickness of the back electrode film is about 900nm. A 1064nm laser is used to etch the silver / zinc oxide back reflection layer (groove 6), and the etching line width is about 30 μm.

[0063] N, I, P three-layer films were deposited in three different reaction chambers of PECVD equipment. After the deposition of the amorphous silicon thin film, the battery sample was naturally cooled to room temperature and taken out from the PECVD equipment. Put it into the magnetron sputtering equipment, under the high vacuum state of 100 ℃, prepare the transparent front electrode of indium tin oxide, and the thickness of the film layer is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method for a flexible substrate silicon-based thin film solar cell integrated inline component, relates to a solar cell integrated inline technology and belongs to the field of thin film solar cells in new energies. As the substrate has poor light transmittance and the cell is of an NIP structure, in the method provided by the invention, an inline mode is designed for the solar cell, the laser etching process is applied to the procedure of the silicon-based thin film solar cell preparation, a screen printing technology is combined and finally the silicon-based thin film solar cell integrated inline component is obtained. The method can is favorable for increasing the production, reducing the cost, accelerating the industrialization process of such batteries, improving the open-circuit voltage of large area cells, reducing the splicing complexity of the component and improving the reliability of the component.

Description

technical field [0001] The invention relates to the field of thin-film solar cells in new energy, in particular to an integrated inline component of silicon-based thin-film solar cells on a flexible substrate and a preparation method thereof. Background technique [0002] The potential of solar energy is huge, and the use of solar energy to generate electricity is an important way to alleviate the energy crisis and improve the ecological environment. As a device that directly converts light energy into electrical energy, solar cells must be effectively connected in series and parallel in the battery structure in order to achieve the desired output in industrial production because the output of a single battery is too small to meet the needs of use. Voltage, current and power. Integrated inline is a method commonly used in thin-film solar cells on glass substrates. Integrated inline is realized during the deposition of solar cells and does not require subsequent processing. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 马宁华陈亮陈鸣波
Owner SHANGHAI INST OF SPACE POWER SOURCES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com