Radiant heat flux measuring device based on bimaterial micro-cantilever beam
A technology of micro-cantilever beam and flux measurement, which is applied in the direction of electric radiation detectors, etc., can solve the problems of inability to quantitatively measure the radiation heat flux value and the saturation of measurement signals, and achieve broad application prospects, scientific value and long service life , High stability effect
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Embodiment 1
[0036] Example 1: Measurement of Flame Radiation Heat Flux Using Triangular Micro-Cantilever Beam
[0037] figure 1 is a schematic diagram of the radiant heat flux measurement device based on the micro-cantilever beam of the present invention; figure 2 It is a schematic diagram of the enlarged side view of the micro-cantilever beam in the vacuum chamber in the radiation heat flux measurement device.
[0038] This embodiment is based on the radiant heat flux measuring device of the dual-material micro-cantilever beam. The cavity 10 that is evacuated inside is airtightly fixed on the transparent lower end surface 5-2 of the housing 6, and the vacuum cavity 10 is arranged toward the direction of the laser 3. There is a transparent window 5-1; the incident light B1 emitted by the laser 3 passes through the lens 4 and converges on the beam body D of the micro-cantilever beam 11 on the reflective film layer C1; the optical signal receiver 9 is placed to receive the reflective film...
Embodiment 2
[0062] Example 2: Measurement of Flame Radiant Heat Flux Using a Rectangular Microcantilever
[0063] In this embodiment, the micro-cantilever 11 adopts a rectangular micro-cantilever, and the structure of the rectangular micro-cantilever is as follows Figure 4As shown, the silicon nitride film layer C2 is coated on the surface of the single crystal silicon substrate C3, and then the aluminum film layer C1 is coated on the surface of the silicon nitride film layer C2, and the micro-cantilever beam can be manufactured by using a micromachining process, and the commonly used process Including photolithography, etching, thin film and other technologies, wherein the thickness of the silicon nitride film layer C2 is 1.6 μm, the thickness of the aluminum film layer C1 is 0.4 μm; the length of the rectangular micro-cantilever beam D-2 is 500 μm, and the width is 90 μm, which is fixed in the middle of the vacuum cavity 10 through the single crystal silicon substrate C3 and parallel t...
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