Zinc oxide nanostructure gas sensor and manufacturing method thereof
A technology of zinc oxide nanometer and manufacturing method, applied in the direction of material resistance, can solve the problems of low reliability, small size, low recognition degree, etc., and achieve the effect of improving reliability, improving sensing sensitivity, and high recognition degree
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[0035] refer to Figure 1 to Figure 3 Shown, the zinc oxide nanostructure gas sensor of the present invention comprises:
[0036] a substrate 11;
[0037] A seed layer 12, which is located on the substrate 11;
[0038] a plurality of zinc oxide nanostructures 13 grown on the seed layer 12;
[0039] A plurality of metal nanoparticles 14 attached to the surface of the plurality of zinc oxide nanostructures 13; and
[0040] Two metal contact layers 15 are located on the plurality of ZnO nanostructures 13 for electrical connection, there is a distance between the two metal contact layers 15, and they are not in contact with each other.
[0041] Preferably, the substrate 11 is an insulating material, and the substrate 11 is sapphire, silicon wafer, glass or IIIA-VA compound semiconductor.
[0042] Preferably, the thickness of the seed layer 12 is between 1 nm and 500 μm, which is zinc oxide or zinc oxide doped with Group IIIA metal. Wherein, the zinc oxide doped with group III...
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