Gan-based light-emitting diode chip and manufacturing method thereof

A technology of LED chips and electrodes, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high equipment cost and low yield, and achieve the effect of reducing production costs

Active Publication Date: 2011-12-21
EPILIGHT TECH
View PDF4 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, GaN-based LED chips prepared by this process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gan-based light-emitting diode chip and manufacturing method thereof
  • Gan-based light-emitting diode chip and manufacturing method thereof
  • Gan-based light-emitting diode chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0030] Such as figure 1 As shown, the preparation method of the GaN-based LED chip of the present invention comprises the following steps:

[0031] S101: providing a sapphire substrate;

[0032] S103: Stealth cutting the sapphire substrate;

[0033] S105: forming a GaN semiconductor layer on the sapphire substrate;

[0034] S107: forming a transparent conductive layer, a P electrode and an N electrode on the GaN semiconductor layer;

[0035] S109: Thinning the sapphire substrate;

[0036] S111: forming a reflective layer on the sapphire substrate; and

[0037] S113: Splinter.

[0038] The following combination Figure 1 to Figure 10 The method of manufacturing the GaN-based LED chip according to Embodiment 1 of the present invention will be described in detail. Specifically, step S101 is firstly performed, that is, providing a sapphire substrate. The substrate used in this embodiment is a flat sapphire substrate 101, the front view of which is as figure 2 As shown in (...

Embodiment approach 2

[0047] Embodiment 2 differs from Embodiment 1 in that the flat sapphire substrate 101 in Embodiment 1 is replaced by a patterned sapphire substrate PSS 201 . The front view of PSS 201 is as Figure 11 shown. The structure after vapor deposition of reflective layer 210 on the back of PSS 201 by vapor deposition technology is as follows Figure 12 As shown, it includes an N-type GaN layer 203, a quantum well layer 204, a P-type GaN layer 205, an N electrode 207, a P electrode 208, a protective film layer 209 and a reflective layer 210, and its preparation method, mutual positional relationship and structure are respectively related to The corresponding components in Embodiment 1 are the same, so the related description is omitted here. In addition, in Figure 12 In , the invisible cutting line is marked by reference numeral 12 .

Embodiment approach 3

[0049] In Embodiments 1 and 2, when performing step S107, that is, when forming the above-mentioned transparent conductive layer, the above-mentioned N electrode, and the above-mentioned P electrode on the above-mentioned GaN semiconductor layer, the transparent conductive layer is first formed on the above-mentioned GaN semiconductor layer, and then Using photolithography and etching technology to partially etch the above-mentioned transparent conductive layer and GaN semiconductor layer, so that the above-mentioned N-type GaN layer is partially exposed, such as Figure 5 and 6 shown.

[0050] The difference from Embodiments 1 and 2 is that in this embodiment, in the step S107 of forming the above-mentioned transparent conductive layer, the above-mentioned N electrode and the above-mentioned P electrode, the above-mentioned GaN semiconductor layer is first partially processed by photolithography and etching technology. Etching to partially expose the above-mentioned N-type G...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Wavelengthaaaaaaaaaa
Login to view more

Abstract

The invention provides a manufacturing method of a GaN-base light-emitting diode chip, which comprises the following steps of: (1) providing a sapphire substrate which comprises a first surface and a second surface which is opposite to the first surface; (2) carrying out invisible cutting on the sapphire substrate from one side where the first surface is located; (2) forming a GaN semiconductor layer on the first surface of the sapphire substrate; (4) forming a transparent conductive layer, a P electrode and an N electrode on the GaN semiconductor layer; (5) thinning the sapphire substrate from one side where the second surface is located; (6) forming a reflecting layer on the second surface of the sapphire substrate; and (7) splinting. According to the manufacturing method, the advantages of an invisible cutting technology and a back evaporation reflecting layer technology can be simultaneously made full use of; and compared with the manufacturing technology of the prior art, the manufacturing method has the advantages of being obvious in a luminance promoting effect and a stability effect, being low in production cost, being simple and easy to operate and being suitable for industrial production.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner EPILIGHT TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2023 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap