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Low-coherence semiconductor laser and its preparation method

A semiconductor and laser technology, applied in the field of low-coherence semiconductor lasers and their preparation, can solve problems such as low resonance loss, increased coherence length, and long cavity length

Inactive Publication Date: 2011-12-28
PAVILION INTEGRATION CORP SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Secondly, high power in the cavity, long cavity length and low resonance loss will increase the coherence length

Method used

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  • Low-coherence semiconductor laser and its preparation method
  • Low-coherence semiconductor laser and its preparation method

Examples

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Embodiment 1

[0036] A low-coherence semiconductor laser of this embodiment, its optical configuration block diagram is as follows figure 1Shown, is to comprise a laser diode assembly 110, and described laser diode assembly 110 comprises a laser diode 150 and collimating lens 120, and photodiode assembly 130 further comprises beam splitter 132, photodiode 135 and beam shaping assembly 140, and beam shaping assembly 140 further comprises a telescope 141 and an additional lens 142 . Arrows indicate the laser light path. Radiation emitted from laser diode 150 is collimated by collimating lens 120 . The beam splitter 132 guides a portion of the laser output 103b into a photodiode 135, where the light signal is converted into an electric current. Most of the laser output 103a enters the beam shaping assembly 140 . A stable laser beam 101 is thus produced.

[0037] Such as Figure 2A Shown is a backside photodiode configuration of the prior art, including front side 252 and back side 251 . ...

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Abstract

The invention discloses a low-coherence semiconductor laser based on PIC technology and a preparation method thereof. The laser module is composed of a semiconductor laser, a driving circuit, a radio frequency (RF) driving current and an automatic power control system. The preparation method includes the following steps: generating an alternating driving current at a frequency in the radio frequency range and inputting it to a semiconductor laser; introducing a part of the laser beam into a photodetector with a response time exceeding 100ns, and the photodetector isolates a large amount of stray light and other optical feedback noises ; The laser beam received by the photodetector generates a real-time response electronic signal, provides electronic feedback signals to the DC and AC currents, and adjusts the driving current bias. The present invention can produce low-coherence semiconductor lasers with good performance.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a low-coherence semiconductor laser capable of modulating driving current with radio frequency (RF) and a preparation method thereof. Background technique [0002] In recent years, low-coherence light has attracted a lot of attention and has become an important technique for absolute remote measurement of quasi-static parameters, such as displacement, temperature, pressure, strain, refractive index, etc. Low-coherence interferometry offers a more practical solution for absolute measurements, whereas conventional interferometric illumination with high-coherence laser sources does not address these issues. In the last few years, significant progress has been made in the fields of signal processing, sensor design, sensor development, sensor multiplexing, etc. Low-coherence lasers are used in applications such as optical coherence tomography (OCT), where improved spatial resoluti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/068
Inventor 罗宁一何克祥范辉季朝华刘理何骏
Owner PAVILION INTEGRATION CORP SUZHOU
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