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Quasi-monocrystalline silicon etching method

A quasi-monocrystalline and silicon wafer technology, applied in the field of solar cell production, can solve the problems of not being able to meet the appearance requirements of commercial production components, not being able to make good use of large crystal grains, and having large differences in appearance and color, so as to achieve optimal light utilization High efficiency, good appearance consistency, and the effect of meeting the appearance requirements

Inactive Publication Date: 2012-01-04
浙江向日葵大健康科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For this type of silicon wafer, the advantages of large grains cannot be fully utilized if only acid texturing is used; and if only alkali texturing is used, it cannot meet the appearance requirements of commercially produced components
At present, the method that has been reported in combination with the acid-alkali texturing process is to use the acid texturing process first and then the alkali texturing process. This process requires high controllability in actual production, and the surface of the silicon wafer is easy to partially shine. After PECVD coating, there is obvious color difference in appearance, and the appearance of quasi-single crystal components after packaging is quite different from the appearance and color of current polycrystalline components.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The silicon wafer used in the experiment is a 156×156 P-type quasi-single crystal cell silicon wafer, and the (100) grain area accounts for ≥50% of the entire silicon wafer area.

[0023] Alkali texturing: choose KOH solution, the mass fraction is 1.5%, in the alkaline solution, add isopropanol, the volume fraction is 5%, and add Shichuang S929-B texturing additive, the volume fraction is 0.5%; the solution temperature is 78°C, control the texturing time so that the etching depth on one side of the silicon wafer is 3.5 μm -4 μm.

[0024] Acid texturing: put the silicon wafer after alkali texturing into acid solution, the acid solution is HF and HNO 3 Mixed acid solution, HF and HNO 3 The overall integral score is 60%, of which HF and HNO 3 The volume ratio is 1:3.2, the texturing temperature is 8°C, and the etching depth on one side of the silicon wafer is controlled by time to be 2.5 μm -3 μm.

[0025] The average reflectance of (100) grains of the silicon wafer obt...

Embodiment 2

[0028] The silicon wafer used in the experiment is a 156×156 P-type quasi-single crystal cell silicon wafer, and the (100) grain area accounts for ≥70% of the entire silicon wafer area.

[0029] Alkali texturing: choose KOH solution, the mass fraction is 1.2%, in the alkaline solution, add isopropanol, the volume fraction is 15%, and add Shichuang S929-B texturing additive, the volume fraction is 0.5%; the solution temperature is 85°C, control the texturing time so that the etching depth of one side of the silicon wafer is 3.5 μm -4.5 μm.

[0030] Acid texturing: put the silicon wafer after alkali texturing into acid solution, the acid solution is HF and HNO 3 Mixed acid solution, HF and HNO 3 The overall integral score is 80%, of which HF and HNO 3 The volume ratio is 1:3, the texturing temperature is 10°C, and the etching depth on one side of the silicon wafer is 1.5μm-2.5μm through time control.

[0031] The average reflectance of (100) grains of the silicon wafers obtai...

Embodiment 3

[0034] The silicon wafer used in the experiment is a 156×156 P-type quasi-single crystal cell silicon wafer, and the (100) grain area accounts for ≥80% of the entire silicon wafer area.

[0035] Alkali texturing: choose KOH solution, the mass fraction is 2%, in the alkaline solution, add isopropanol, the volume fraction is 3%, and add Shichuang S929-B texturing additive, the volume fraction is 0.5%; the solution temperature is 75°C, control the texturing time so that the etching depth of one side of the silicon wafer is 4 μm -5 μm.

[0036] Acid texturing: put the silicon wafer after alkali texturing into acid solution, the acid solution is HF and HNO 3 Mixed acid solution, HF and HNO 3 The overall integral score is 70%, of which HF and HNO 3 The volume ratio is 1:2; the texturing temperature is 3°C, and the etching depth on one side of the silicon wafer is 1.5 μm -2 μm through time control.

[0037] The average reflectance of (100) grains of silicon wafers obtained by the ...

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Abstract

The invention relates to the solar energy cell production technology method field, concretely relating to a quasi-monocrystalline silicon etching method which comprises an alkaline etching operation on a quasi-monocrystalline silicon which mainly is (100) crystal grain and an acid etching operation on the quasi-monocrystalline silicon. Compared with simple acid etching, according to the invention, photoelectric conversion efficiency of a quasi-monocrystalline cell is obviously raised, a shiny phenomenon of part etching face caused by adopting simple alkaline etching can be obviously eliminated, and a whole process can be accurately adjusted according to an area the (100) crystal grain occupies. The quasi-monocrystalline silicon etching method has the characteristics of a fully controllable processing process, a good integral etching effect, qualified appearance and simple technology, and is suitable for quasi-monocrystalline silicon large scale production.

Description

technical field [0001] The invention relates to the field of production technology methods of solar cells, in particular to a texturing method for quasi-single crystal silicon wafers. Background technique [0002] Texturing is a surface treatment method for preparing silicon wafers that can reduce light reflection. Texturing the surface and using the light trapping effect on the surface to improve the absorption and utilization of light is an essential process for manufacturing high-efficiency solar cells. [0003] In the manufacturing process of silicon solar cells, the monocrystalline silicon wafer generally adopts an anisotropic alkali texturing method to form a pyramid texture on the surface of the silicon wafer, so that the incident light is reflected multiple times, which greatly improves the absorption of light and achieves an increase in conversion. purpose of efficiency. The process of alkali texturing method is cheap and suitable for mass production of monocrystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 金若鹏
Owner 浙江向日葵大健康科技股份有限公司
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