Semiconductor device
A semiconductor and nitride semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of increased occupation area, increased cost, increased number of peripheral components, etc., and achieves the effect of high switching performance
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no. 1 approach
[0048] A first embodiment will be described with reference to the drawings. figure 1 A cross-sectional structure of the semiconductor device according to the first embodiment is shown. Such as figure 1 As shown, the semiconductor device of this embodiment is an HFET formed on a substrate 101 . The substrate 101 may be Si, sapphire, silicon carbide (SiC), GaN, or the like. A buffer layer 103 having a film thickness of 2 μm is formed on the substrate 101 . On the buffer layer 103 is formed a semiconductor layer stack 105 including a first nitride semiconductor layer 106 made of undoped GaN with a thickness of 3 μm and an undoped AlGaN with a film thickness of 25 nm. The second nitride semiconductor layer 107 is sequentially stacked.
[0049] A first ohmic electrode 111 serving as a source electrode and a second ohmic electrode 113 serving as a drain electrode are formed on the semiconductor layer stack 105 . It is sufficient that the first ohmic electrode 111 and the second...
no. 2 approach
[0056] Hereinafter, a second embodiment will be described with reference to the drawings. Figure 5 The planar structure of the semiconductor device of 2nd Embodiment is shown. But when Figure 5 Only the arrangement of electrodes and pads is shown in , and the description of the insulating film covering the electrodes, the plugs connecting the electrodes and the pads, etc. is omitted. In addition, in Figure 5 in, right with figure 1 The same components are given the same symbols and their descriptions are omitted. Such as Figure 5 As shown, the semiconductor device of the second embodiment is a multi-finger type HFET. By forming it into a multi-finger type, efficient layout can be realized. Therefore, the gate width of the HFET can be made very large, and a power device capable of operating with a large current can be realized.
[0057] The semiconductor layer stack 105 is formed on the substrate with the buffer layer interposed therebetween. A first ohmic electrode...
no. 3 approach
[0066] Hereinafter, a third embodiment will be described with reference to the drawings. Figure 10 A planar structure of the semiconductor device of the third embodiment is shown. But when Figure 10 Only the arrangement of the electrodes and pads is shown in , and the description of the insulating film covering the electrodes, the plugs connecting the electrodes and the pads, etc. is omitted. In addition, in Figure 10 in, right with Figure 5 The same symbols are assigned to the same constituent elements, and their descriptions are omitted.
[0067] In the semiconductor device of the present embodiment, a diode 241 is formed instead of the resistance element 231 . Such as Figure 11 As shown, a diode 241 has a p-type AlGaN layer 243 and a cathode electrode 245 . The p-type AlGaN layer 243 is formed on a portion of the semiconductor layer stack 105 that has not been made highly resistive. Therefore, a 2DEG layer is formed at the heterojunction interface below the p-ty...
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