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Method for selectively reducing graphene oxide by using hindered amine light stabilizer

A technology of light stabilizers and hindered amines, which is applied in the field of nanomaterials chemical technology, can solve the problems of blending materials that limit graphene, and achieve the effects of energy saving and environmental protection, simple operation methods, and high group selectivity.

Inactive Publication Date: 2012-10-24
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, high-temperature reduction of graphene materials requires high-temperature resistance of the structural host, which greatly limits the preparation of graphene-based blend materials, especially the preparation of graphene-based organic / polymer blend materials.

Method used

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  • Method for selectively reducing graphene oxide by using hindered amine light stabilizer
  • Method for selectively reducing graphene oxide by using hindered amine light stabilizer

Examples

Experimental program
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Effect test

Embodiment

[0035] Example: preparation of redispersible graphene semiconductor material by catalysis of small molecular hindered amines.

[0036] Graphene oxide powder preparation: 2.5g graphite, 1.9g NaNO 3 , 11.5g KMnO 4 and 85ml concentrated H 2 SO 4 After mixing, stir in an ice bath for 1 hour, then stir at room temperature for 2 days, and finally add 250ml of 5wt% concentrated sulfuric acid and 20ml of 30wt% H 2 o 2 Continue to stir for 2 days, centrifuge, and wash with deionized water, repeating this 8 times to obtain graphene oxide.

[0037]Preparation of graphene oxide solution: First, the prepared graphene oxide is ultrasonically dispersed to obtain a dispersed graphene oxide solution, and a very small amount of unexfoliated particles is removed by centrifugation at 3000 rpm for 30 minutes. Secondly, the centrifuged upper layer solution was centrifuged again at a speed of 4000 rpm for 30 minutes to obtain a sediment containing graphene oxide with a relatively uniform size, ...

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Abstract

The invention relates to a selectively reduced graphene oxide material and a preparation method thereof, belonging to the field of nano science and technology. The invention particularly relates to a technology for preparing a soluble reduced graphene material through a hindered amine light stabilizer catalytic method under the radiation of ultraviolet light. The hindered amine light stabilizer catalytic reduction method provided by the invention has the characteristics that: 1) the group selectivity is high, and carboxyl groups and carbonyl groups can be selectively removed; 2) the product solubility is good; 3) hindered amine catalysts are nontoxic and metal-free; 4) hindered amine additives have the ability of dispersing graphene and can also remove the graphene; and 5) the operating method is simple, environment-friendly and the like. The technology well makes up the defects of high toxicity, high energy consumption (such as high temperature) and uncontrollable reduction process of the traditional graphene oxide material reduction method, is expected to become an important step for the chemical and industrial production of graphene materials, and has a potential of being widely applied to graphene photoelectric materials, graphene organic structural materials and organic photoelectric functional devices, especially the graphene photoelectric materials.

Description

technical field [0001] The invention belongs to the technical field of nanometer material chemistry. It specifically relates to a technology for preparing carboxyl-free soluble graphene materials by UV-induced steric hindered amine light stabilizer catalysis at room temperature, which has attractive application value in the production of graphene-based photoelectric materials and graphene-based organic structural materials. Background technique [0002] Graphene and its derivative materials are widely used in many fields, such as organic optoelectronic materials, carbon-based semiconductor materials, electrode materials for organic optoelectronic functional devices, active layer materials, etc. Currently, the most commonly used graphene material preparation methods are chemical vapor deposition (CVD) and chemical exfoliation (Chemical Exfoliation). Chemical vapor deposition can produce high-quality, large-area graphene, and has the potential to produce high-quality graphene...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04B82Y40/00
Inventor 黄维解令海赵飞艾伟刘举庆仪明东张广维
Owner NANJING UNIV OF POSTS & TELECOMM
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