Preparation method of double-structure suede transparent conducting oxide thin film of thin film cell
A technology of oxide thin film and thin film battery, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems that it is difficult for the thin film to have two sizes at the same time, and it is impossible to achieve scattering at the same time, so as to improve conversion efficiency, improve light absorption and Utilization, the effect of broadening the spectral range
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[0017] The present invention proposes to prepare double-structure suede ZnO: the specific manufacturing process of Al transparent conductive film is as follows:
[0018] 1. First use the plasma to bombard the glass substrate, adjust the gas ionization voltage of the plasma, the ion focus voltage, the plasma beam current, and the vacuum degree of the plasma bombardment to form a textured surface on the glass surface;
[0019] 2. Using methods such as magnetron sputtering or low-pressure chemical vapor deposition or spin coating on the above-mentioned textured glass substrate to prepare ZnO:Al transparent conductive film;
[0020] 3. Wet-etch the prepared ZnO:Al transparent conductive film, and adjust the type, concentration, temperature, etching time, substrate movement speed and other parameters of the etching solution to obtain the desired shape and characteristic size. surface texture.
[0021] The present invention proposes to first process the glass substrate to obtain a ...
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