Recovery method of waste chlorsilane in polysilicon produced through modified Simens Method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LESHAN LEDIAN TIANWEI SILICON TECH CO LTD
- Publication Date
- 2012-03-14
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for recovering waste chlorosilane in polysilicon production by the improved Siemens process, and belongs to the field of polysilicon production. Background technique
[0002] The current production process of trichlorosilane, the raw silicon powder enters the synthesis furnace through the silicon powder feeding system and reacts with hydrogen chloride to generate trichlorosilane, and simultaneously generates silicon tetrachloride, dichlorodihydrosilane, metal chloride, polychloride Silane, hydrogen and other by-products, this mixed gas is called trichlorosilane synthesis gas. When the trichlorosilane synthesis gas comes out of the furnace, it will carry a small amount of silicon powder. After removing part of the silicon powder through a dry dust removal system (such as a bag dust removal system, etc.), it is sent to a wet dust removal system and washed by silicon tetrachloride liquid. The discharged chlorosilane wast...