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Method for preparing Na-doped p-type NnO film

A thin-film, p-type technology, applied in the field of thin-film doping, can solve the problems of destroying the quality of ZnO thin films, being easily corroded, and affecting the purity of dopants.

Inactive Publication Date: 2012-03-14
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are some defects in this diffusion method. On the one hand, it is easy to introduce other metal impurities when configuring the sodium salt solution, thereby affecting the purity of the dopant; Alkaline environment is very sensitive, it is easy to be corroded, and the quality of ZnO film will be damaged
[0005] When preparing Na-doped ZnO thin films by the general pulse laser deposition method, a single Na-doped ZnO ceramic target is used, and two kinds of targets are used: NaF target as Na doping source and ZnO target to grow ZnO thin films. no one reported yet

Method used

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  • Method for preparing Na-doped p-type NnO film
  • Method for preparing Na-doped p-type NnO film
  • Method for preparing Na-doped p-type NnO film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Take the following process steps: 1) Clean the sapphire substrate, put it into the growth chamber of the pulsed laser deposition device after cleaning, and pump the vacuum of the reaction chamber to 1×10 -4 Pa; then heat the substrate so that the substrate temperature is 400°C; adjust the oxygen pressure to 2Pa. First, pure ZnO was used as the target to sputter and deposit ZnO thin film for 90 s, and then the target was changed to pure NaF target for sputter growth for 10 s, and Na-doped ZnO thin film was prepared in this way for 20 cycles. The distance between the substrate and the target is 4.5 cm, the laser frequency is 3 Hz, and the laser energy is 250 mJ. After growth, cool down to room temperature at a rate of 3 °C / min. The Na-doped ZnO film on the sapphire substrate is n-type; 2) The Na-doped ZnO film on the sapphire substrate 2 Rapid annealing treatment at 400°C for 5 minutes in the atmosphere, so that Na ions diffuse in the ZnO film, and obtain p Type ZnO f...

Embodiment 2

[0029] Take the following process steps: clean the quartz substrate, put it into the growth chamber of the pulsed laser deposition device after cleaning, and pump the vacuum of the reaction chamber to 1.0×10 -3 Pa; then heat the substrate so that the substrate temperature is 550°C; adjust the oxygen pressure to 30Pa. First, pure ZnO was used as the target to sputter and deposit ZnO thin film for 90 s, and then the target was switched to pure NaF target for sputter growth for 10 s, and Na-doped ZnO thin film was prepared by 20 cycles of growth in this way. The distance between the substrate and the target is 5 cm, the laser frequency is 5 Hz, and the laser energy is 300 mJ. After growth, cool down to room temperature at a rate of 4 °C / min. Na-doped ZnO films were obtained. 2) As-prepared Na-doped ZnO thin film in N 2 Rapid annealing at 650°C for 5 minutes under atmosphere.

[0030] Carry out the Hall test, you can see that the test results show that the carrier type is p t...

Embodiment 3

[0033] Take the following process steps: clean the quartz substrate, put it into the growth chamber of the pulsed laser deposition device after cleaning, and pump the vacuum of the reaction chamber to 8.0×10 -4 Pa; then heat the substrate so that the substrate temperature is 550°C; adjust the oxygen pressure to 0.02Pa. First, pure ZnO was used as the target to sputter and deposit ZnO thin film for 90 s, and then the target was switched to pure NaF target for sputter growth for 10 s, and Na-doped ZnO thin film was prepared by 20 cycles of growth in this way. The distance between the substrate and the target is 5 cm, the laser frequency is 5 Hz, and the laser energy is 300 mJ. After growth, cool down to room temperature at a rate of 3 °C / min. 2) As-prepared Na-doped ZnO thin film in N 2 Rapid annealing at 650°C for 5 minutes under atmosphere. Na-doped ZnO films were obtained.

[0034] The prepared Na-doped ZnO film was tested by XPS, and it can be seen that the test results...

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Abstract

The invention discloses a method for preparing a Na-doped p-type NnO film. A pulse laser deposition method is adopted. In the method, a NnO layer and a Na layer are grown by alternately sputtering high-purity NnO and high-purity NaF ceramic target materials as sputtering target materials to prepare the p-type Na-doped NnO film. The distance between the target materials and a substrate is 4.5-5.5 cm, the backland vacuum degree of a growth chamber is pumped to 1*10<-4>-1*10<-3> Ps, the substrate is heated to increase the temperature of the substrate to 400-700 DEG C, the laser frequency is 3-10Hz, and the laser energy is 250-350 mJ. The grown film is cooled at 3-5 DEG C / min to room temperature. The Na-doped p-type NnO film preparation method provided by the invention is simple, and the used device and the current technology are compatible.

Description

technical field [0001] The technical field of film doping of the present invention relates to a preparation method of Na-doped p-type ZnO film. Background technique [0002] ZnO is a compound semiconductor with a wide bandgap (3.37eV). It has abundant raw materials, low price, high doping tolerance and various preparation methods. It is considered to be an ideal GaN semiconductor substitute material. Due to the easy formation of various shallow donor defects in intrinsic ZnO, or unintentional doping of impurities, such as H, ZnO presents n type, and its n Type-doped ZnO is also extremely easy to prepare. Therefore, in order to achieve commercial optoelectronic applications, stable, low resistivity, high mobility, high crystal quality p Type ZnO thin film becomes the primary problem. Researchers have tried VI, such as N, P doping, and then I doping elements such as Li, Na, and K. Among them, the Na element has been widely concerned. The reason is that the I element has a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06
Inventor 叶志镇刘慧斌黄靖云何海平张银珠卢洋藩蒋杰李洋潘新花
Owner ZHEJIANG UNIV
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