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P-type conductive zinc oxide film material and preparation method thereof

A technology for conducting zinc oxide and thin film materials, applied in the field of nanomaterials, can solve the problems of unstable ZnO acceptor impurities, low carrier mobility, low carrier concentration, etc., and achieve stable hole conduction and high current carrier. sub-concentration, the effect of increasing the doping concentration

Inactive Publication Date: 2014-09-17
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] To sum up, the disadvantages of realizing p-type ZnO conduction at present are: low carrier concentration and low carrier mobility; and, acceptor impurities in ZnO are unstable; Easy transition from hole conduction to electron conduction

Method used

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  • P-type conductive zinc oxide film material and preparation method thereof
  • P-type conductive zinc oxide film material and preparation method thereof
  • P-type conductive zinc oxide film material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Such as figure 1As shown, a p-type conductive zinc oxide thin film material includes a substrate 1 and an epitaxial layer grown on the substrate, and a metal magnesium layer 2, a magnesium oxide layer 2, and a magnesium oxide layer are sequentially arranged between the substrate and the epitaxial layer from bottom to top. Layer 3, the first zinc oxide layer 4 and the second zinc oxide layer 5 whose growth temperature gradually increases; the epitaxial layer is p-type BeZnO formed by doping the acceptor element N and doping Be atoms in the zinc oxide alloy: N layer 6. The p-type ZnO conductive thin film is in a single crystal state through XRD test, and its rocking curve scanning half maximum width FWHM is 0.09°. Wherein, the material of the substrate 1 is sapphire. The thickness of the metal magnesium layer 2 is 0.5 nm. The thickness of the magnesium oxide layer is 2 nm. The thickness of the first zinc oxide layer 4 is 1.5 nm. The thickness of the second zinc oxide...

Embodiment 2

[0055] Such as figure 2 As shown, a p-type conductive zinc oxide thin film material includes a substrate 1 and an epitaxial layer grown on the substrate, and a metal magnesium layer 2, a magnesium oxide layer 2, and a magnesium oxide layer are sequentially arranged between the substrate and the epitaxial layer from bottom to top. Layer 3, the first zinc oxide layer 4 and the second zinc oxide layer 5 whose growth temperature gradually increases; the epitaxial layer is p-type BeZnO formed by doping the acceptor element N and doping Be atoms in the zinc oxide alloy: N layer 6. The p-type ZnO conductive thin film is in a single crystal state through XRD test, and its rocking curve scanning half maximum width FWHM is 0.08°. Wherein, the material of the substrate 1 is sapphire. The thickness of the metal magnesium layer 2 is 0.7 nm. The thickness of the magnesium oxide layer is 2 nm. The thickness of the first zinc oxide layer 4 is 2 nm. The thickness of the second zinc oxide...

Embodiment 3

[0071] Such as image 3 As shown, a p-type conductive zinc oxide thin film material includes a substrate 1 and an epitaxial layer grown on the substrate, and a metal magnesium layer 2, a magnesium oxide layer 2, and a magnesium oxide layer are sequentially arranged between the substrate and the epitaxial layer from bottom to top. Layer 3, the first zinc oxide layer 4 and the second zinc oxide layer 5 whose growth temperature gradually increases; the epitaxial layer is p-type BeZnO formed by doping the acceptor element N and doping Be atoms in the zinc oxide alloy: N layer 6. The p-type ZnO conductive thin film is in a single crystal state through XRD test, and its rocking curve scanning half maximum width FWHM is 0.085°. Wherein, the material of the substrate 1 is sapphire. The thickness of the metal magnesium layer 2 is 1 nm. The thickness of the magnesium oxide layer is 3 nm. The thickness of the first zinc oxide layer 4 is 2 nm. The thickness of the second zinc oxide l...

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Abstract

The invention discloses a p-type conductive zinc oxide film material, which comprises a substrate and an epitaxial layer growing on the substrate, wherein a metal magnesium layer, a magnesium oxide layer, a first zinc oxide layer and a second zinc oxide layer are arranged in sequence between the substrate and the epitaxial layer; the growth temperatures of the first and the second zinc oxide layers are gradually increased; and the epitaxial layer is a p-type AZnO:B layer formed by a zinc oxide alloy doped with acceptor element B and A atoms. The p-type conductive zinc oxide film material and the preparation method thereof have the advantages that the stable hole conduction with high-carrier concentration is achieved by introducing A atoms into ZnO to form AZnO alloy and then doping acceptor element B in the alloy. In the invention, the Zn atoms are replaced by the introduced A atoms, and after the A atoms bond with the acceptor atoms B, since the energy of A-B bonds is very strong as compared with that of the Zn-B bonds, the A atoms can effectively trap the acceptor B atoms to prevent instability due to the Zn-B bond rupture during the process of directly doping the acceptor B atoms in ZnO. Besides, the introduction of A atoms increases the doping concentration of acceptor B atoms, so as to ensure high-concentration and stable hole conduction.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a p-type conductive zinc oxide film material and a preparation method. Background technique [0002] Due to its large band gap and large exciton binding energy, ZnO can realize exciton recombination emission at room temperature. This method has the advantages of high quantum efficiency and low threshold, so ZnO is considered to be the material of choice for next-generation optoelectronic devices. Due to crystal defects and unintentional doping in intrinsic ZnO, intrinsic ZnO exhibits n-type conductivity. At present, the main reason restricting the application of ZnO in semiconductor optoelectronic devices is the inability to realize p-type conduction with stable and high carrier concentration. [0003] At present, there are mainly four ways to realize ZnO p-type conductivity: [0004] First, ZnO is directly doped with group V elements N, P or As, and group V elemen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/20H01L21/36
CPCY02P70/50
Inventor 汤子康陈明明苏龙兴张权林祝渊吴天准桂许春项荣
Owner SUN YAT SEN UNIV