Method for realizing preparation of selective emitter region by utilizing one-time diffusion
A technology of emission area and selectivity, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of high diffusion concentration, poor uniformity of emission area, low diffusion concentration, etc., and achieve low corrosion temperature , low cost and simple process
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[0021] The preparation of the low-concentration diffusion area is printed on the PSG layer with corrosive paste. The thickness of the corrosive paste after printing is 4~7μm, and then it is heated and etched. The etching time is 0.5~3min, and the etching temperature is 150℃~300℃ . By controlling the temperature and time, the sheet resistance of the corrosion area can be accurately controlled between 60~120Ω∕□. Then use KOH solution or NaOH solution to clean the residual corrosive slurry, the concentration of the solution is 0.1wt%~0.5wt%, and the temperature is 30~40°C. When the corrosive paste is printed on the non-electrode area, the screen size used is 325 mesh and the wire diameter is 23 μm.
[0022] The selective emission region structure prepared by this method avoids the complicated process of two diffusions, saves a high-temperature process, and does not need to add additional equipment. The corrosion process of the corrosive slurry is precisely controllable, the corr...
Embodiment 1
[0025] A P-type monocrystalline silicon wafer is selected, and the volume resistivity of the silicon wafer is 1Ω·cm. After the silicon wafer has undergone conventional damage removal and texturing processes, it is re-diffused to obtain a sheet resistance of 50Ω / □. Then, the corrosive paste is printed on the non-electrode pattern area of the silicon wafer through the screen printing process (the manufacturer of the corrosive paste is Merck, and the model is isishape SmartEtch). The screen size used for printing is 325 mesh, the wire diameter is 23 μm, The thickness is 5 μm, and the thickness after printing with corrosive paste is 5 μm. The silicon wafer printed with the corrosive paste was kept at a temperature of 210°C for 1.5 minutes. During this process, the area printed with the corrosive paste would be corroded, and the square resistance of the etched area was 110Ω∕□. Afterwards, the residual corrosive slurry on the silicon wafer was washed with 0.5 wt % NaOH solution a...
Embodiment 2
[0027] A P-type monocrystalline silicon wafer is selected, and the volume resistivity of the silicon wafer is 3Ω·cm. After the silicon wafer has undergone conventional damage removal and texturing processes, it is re-diffused to obtain a sheet resistance of 45Ω / □. Then, the corrosive paste is printed on the non-electrode pattern area of the silicon wafer through the screen printing process (the manufacturer of the corrosive paste is Merck, and the model is isishape SmartEtch). The screen size used for printing is 325 mesh, the wire diameter is 23 μm, The thickness is 6 μm, and the thickness after printing with corrosive paste is 6 μm. The silicon wafer printed with the corrosive paste was kept at a constant temperature of 180°C for 2 minutes. During this process, the area printed with the corrosive paste would be corroded, and the square resistance of the etched area was 90Ω / □. Afterwards, the remaining corrosive slurry on the silicon wafer was washed with 0.5 wt% NaOH solu...
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