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Preparation method for strained SiGe layer with high Ge component

A technology of strained silicon layer and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problems of strain partial relaxation, improvement, and unfavorable device performance

Inactive Publication Date: 2012-04-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the Ge composition is too high, a large number of dislocation defects will be generated in the layer, resulting in the relaxation of the strained part in the layer, which is not conducive to the improvement of device performance. Therefore, the Ge composition in the traditional SiGe layer is usually 30%~40%

Method used

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  • Preparation method for strained SiGe layer with high Ge component
  • Preparation method for strained SiGe layer with high Ge component
  • Preparation method for strained SiGe layer with high Ge component

Examples

Experimental program
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Embodiment 1

[0015] Example 1: Preparation of a strained Si layer by using a low-temperature silicon (LT-Si) method

[0016] combined with figure 2 A method for preparing strained Si by LT-Si, and then preparing a strained SiGe layer with a high Ge composition on the strained Si, the specific method includes the following steps:

[0017] Step 1: preparing Si substrate 1, using single crystal silicon as the substrate, and cleaning it;

[0018] Step 2: On the Si substrate 1, epitaxy a 100nm LT-Si layer 102 at a temperature of 400°C by chemical vapor deposition (CVD);

[0019] Step 3: On the LT-Si layer 102, chemical vapor deposition (CVD) is used to form SiH 4 , GeH 4 As the gas source, at 550°C, epitaxy 100nmGe content of 20% relaxed Si 0.8 Ge 0.2 Layer 3;

[0020] Step 4: In relaxing Si 0.8 Ge 0.2 On layer 3, a 50nm strained Si layer 4 is grown at 550° C. by chemical vapor deposition (CVD);

[0021] Step five: using chemical vapor deposition (CVD), with SiH 4 , GeH 4 As the gas...

Embodiment 2

[0023] Example 2: Preparation of a strained Si layer by ion implantation

[0024] combined with image 3 , with Figure 4 , with Figure 5 The present invention is illustrated by Example 2. The difference from Example 1 is that the method for preparing the strained Si layer is different. The specific method includes the following steps:

[0025] Step 1: preparing Si substrate 1, using single crystal silicon as the substrate, and cleaning it;

[0026] Step 2: use chemical vapor deposition (CVD) to SiH 4 , GeH 4 As a gas source, at 550 ° C, epitaxial 100nm Ge content of 20% Si 0.8 Ge 0.2 Layer 3;

[0027] Step 3: On Si substrate 1 and Si 0.8 Ge 0.2 Between layers 3, ions are implanted into boron B and oxygen O to form a viscous and fluid borosilicate glass layer 202;

[0028] Step 4: Perform high-temperature rapid thermal annealing to repair Si 0.8 Ge 0.2 Layer 3 lattice damage caused by ion implantation, and makes Si 0.8 Ge 0.2 The strain in layer 3 is completely ...

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Abstract

The invention discloses a preparation method for a strained silicon germanium (SiGe) layer with a high germanium (Ge) component, which belongs to the technical field of a semiconductor and particularly relates to a preparation of the strained silicon germanium (SiGe). The method comprises the following steps of: preparing a silicon (Si) substrate; and using a traditional method of growing a strained Si layer to grow the strained Si layer with little strain and better quality on the Si substrate, and using an epitaxial technology such as chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) and the like to epitaxially grow a strained SiGe layer with the high Ge component on the grown strained Si layer. More defects in the SiGe layer are reduced by epitaxially growing the SiGe layer on the strained Si layer and relieving strain in the SiGe layer by the strain in the strained Si, so that the higher Ge component can be realized; and the involved equipment and process and the like are all the most common and ordinary semiconductor processes. Therefore, the preparation method not only can prepare the strained silicon germanium layer with high germanium but also has the advantages of simple preparation and low cost.

Description

Technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a strained SiGe layer with a high germanium (Ge) component. Background technique [0002] In modern semiconductor technology, improving the performance of semiconductor devices is a very important topic. Improving carrier mobility is one of the effective measures to increase the driving current of semiconductor devices, and the improvement of carrier mobility can be achieved by introducing strain in the channel. For example, for P-type insulated gate field effect transistors (PMOSFETs), using strained SiGe with compressive strain as the channel can greatly increase the mobility of holes, thereby improving the performance of the device; on the other hand, compared with silicon , germanium material has higher carrier mobility. Therefore, the greater the Ge composition in the SiGe layer, the greater the strain in the layer, the greater the increase in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
Inventor 王向展王微秦桂霞曾庆平
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA