Transfer plate with metal vertical interconnection structure and manufacture method thereof

A technology of vertical interconnection and manufacturing method, applied in the field of three-dimensional stacking, can solve the problems of complex process and high cost of manufacturing three-dimensional stacked chips, and achieve the effects of simplified process steps, simple structure and convenient operation.

Active Publication Date: 2012-04-18
NAT CENT FOR ADVANCED PACKAGING
View PDF4 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide a new adapter plate with a metal vertical interconnection structure and its

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transfer plate with metal vertical interconnection structure and manufacture method thereof
  • Transfer plate with metal vertical interconnection structure and manufacture method thereof
  • Transfer plate with metal vertical interconnection structure and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0043]

[0044] First, refer to figure 1 The first embodiment of the metal vertical interconnection structure applied to three-dimensional stacked chips disclosed in the present invention will be introduced. This embodiment 1 is a specific structure when the present invention is applied to an interposer.

[0045] In such figure 1 The shown transition board structure includes a substrate 101. In this embodiment, the material of the substrate 101 is glass, but it can also be silicon or organic material. There is a passivation layer 102 on the lower surface of the substrate 101. The material of the passivation layer 102 is polyimide in this embodiment. There is a metal bump structure on the lower surface side of the passivation layer 102. The metal bump structure includes a pad 104 buried in the passivation layer 102. There is a metal bump 103 on the lower surface of the pad 104. . In this embodiment, the pad 104 is made of metal aluminum. In this embodiment, the material of th...

Example Embodiment

[0054]

[0055] image 3 The metal vertical interconnection structure applied to a three-dimensional stacked chip according to Embodiment 2 of the present invention is depicted. Specifically, the second embodiment is also a specific structure when the present invention is applied to an interposer.

[0056] In such image 3 The interposer board shown includes a substrate 206. In the second embodiment, the substrate 206 is a 4-inch silicon wafer with a thickness of 200 microns. Optionally, the material of the substrate 206 may also be glass or organic material. There is a passivation layer 205 on the lower surface of the substrate 206. There is a metal bump structure in the passivation layer 205, a part of the metal bump structure is embedded in the passivation layer 205, and the other part protrudes from the lower surface of the passivation layer 205.

[0057] Specifically, the metal bump structure includes a pad 204, an underlying metal layer 203, a metal pillar 202, and a solde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a transfer plate with a metal vertical interconnection structure and a manufacture method thereof. The transfer plate comprises a base plate, a passivation layer, a metal salient point structure and a metal interconnection wire, wherein the passivation layer is formed at the lower surface of the base plate, and the metal salient point structure is formed at the lower surface of the passivation layer. The metal salient point structure comprises a welding disc and a metal salient point, wherein the welding disc is buried inside the passivation layer, the metal salient point is formed on the lower surface of the welding disc, one part of the metal salient point is buried inside the passivation layer, and the other part of the metal salient point is exposed out of the lower surface of the passivation layer. The metal interconnection wire extends from the upper surface of the base plate to the lower surface of the base plate, penetrates through the whole base plate and passes through the passivation layer and the welding disc until reaching the inside of the metal salient point, so the metal salient point is electrically connected with devices arranged above the base plate through the metal interconnection wire. The transfer plate and the manufacture method have the advantages that the process is simple, the cost is low, and a high hole making qualified rate is realized, so the problems of high hole filling cost, complicated process and the like of the metal vertical interconnection structure are solved.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional stacking in chip packaging technology, and in particular relates to an adapter plate with a metal vertical interconnection structure and a manufacturing method thereof. Background technique [0002] In recent years, advanced packaging technology has appeared in the IC manufacturing industry, especially 3D packaging first breaks through the traditional concept of planar packaging, and the assembly efficiency is as high as 200%. In 3D packaging technology, multiple chips can be stacked in a single package to double the storage capacity, which is called stacked 3D packaging in the industry. Second, by directly interconnecting the chips, the length of interconnect lines is significantly shortened, allowing signals to travel faster and with less interference. Thirdly, by stacking multiple chips with different functions together, a single package can realize more functions, thus forming a new...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/48H01L21/768
CPCH01L24/11H01L23/481H01L2224/0557H01L2224/13025H01L21/76898H01L23/49827H01L21/486H01L23/15H05K3/421H05K2201/10378H01L2224/11H01L2224/13H01L2924/00012
Inventor 于大全戴风伟
Owner NAT CENT FOR ADVANCED PACKAGING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap