Germanium-silicon heterojunction bipolar transistor and manufacturing method thereof

Abstract

The invention discloses a germanium-silicon heterojunction bipolar transistor. A base region is composed of three layers of structures including a silicon buffering layer, a germanium-silicon layer and a silicon cap layer. An accelerating field of electrons is formed in the base region by the germanium-silicon layer to improve the frequency response of a device. The silicon cap layer can be used for optimizing the position of an emission junction, reducing a recombination current of the base region and improving the linearity and a BVCEO (Breakdown Voltage ceo) of the device. A collector electrode is led out from shallow slot isolation through a fake buried layer and a deep hole contact so that the resistance of the collector electrode can be reduced and the frequency response of the device can be improved. The fake buried layer is doped by arsenic so that the cross diffusion of the fake buried layer can be effectively controlled, the parasitic capacitance is reduced and the frequency response of the device is improved. An emission region is of a narrow emission electrode structure and can be used for inhibiting a current crowding effect and improving a current density in a unit area. One silicon oxidation layer is formed on a contact position between the emission region and the base region so that a barrier height of the emission junction can be improved and the injection frequency of the emission junction is improved. The invention further discloses a manufacturing method of the germanium-silicon heterojunction bipolar transistor.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a germanium-silicon heterojunction bipolar transistor; the invention also relates to a manufacturing method of the germanium-silicon heterojunction bipolar transistor. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. Silicon ge...

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Problems solved by technology

[0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of the compound semiconductor is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited

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