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Rotating magnetron sputtering apparatus

A technology of rotating magnets and sputtering, which is applied in the directions of permanent magnets, sputtering coatings, and vacuum evaporation coatings. The effect of increasing the amount of power that can be applied and improving throughput

Inactive Publication Date: 2014-02-19
TOHOKU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if the plasma excitation power is increased, the high temperature of the target and the back plate supporting the target cannot be avoided due to the increase of the plasma heat flow.
Therefore, there is a danger of melting the indium layer bonding the target object and the back plate, causing the target object to fall off, deforming the back plate, etc.

Method used

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  • Rotating magnetron sputtering apparatus
  • Rotating magnetron sputtering apparatus
  • Rotating magnetron sputtering apparatus

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no. 1 approach

[0030] refer to figure 1 , the cooling mechanism in the rotary magnet sputtering apparatus according to the first embodiment of the present invention will be described. Here, only the parts related to the cooling mechanism in the rotary magnet sputtering device are briefly shown.

[0031] figure 1 Among them, 401 is a back plate, 402 is a rotating magnet, 403 is a target part, and 404 is a cooling water flow path. In this embodiment, the cooling water flow path 404 constituting the cooling mechanism is provided in the portion of the back plate 401 that overlaps the target portion 403 . As shown in the figure, the target portion 403 is disposed on one surface of the back plate 401 , and the rotating magnet 402 is disposed on the opposite side of the back plate 401 from the surface on which the target portion 403 is disposed. Figure 5 This is a view of the backplane viewed from above. A cooling water flow path 404 is provided so as to overlap with the target part 403. 502 i...

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PUM

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Abstract

Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion.

Description

technical field [0001] The present invention relates to a sputtering device widely used in the film formation of metals and insulators, and more particularly to a processing device for performing predetermined surface treatment on objects to be processed such as liquid crystal display device substrates and semiconductor substrates, that is, a magnetic sputtering device using a rotating magnet. Controlled sputtering device. Background technique [0002] Sputtering devices are widely used in the manufacture of optical discs, in the manufacture of electronic devices such as liquid crystal display elements and semiconductor elements, and in the manufacture of other general metal thin films and insulator thin films. The sputtering device uses the raw material for thin film formation as the target, and uses DC high voltage or high frequency power to plasma argon gas, etc., and uses the plasma gas to activate the target to melt, splash, and adhere to the treated surface. on the su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
CPCH01J37/3405H01J37/3497C23C14/35H01F7/02C23C14/14H01L21/02631
Inventor 大见忠弘后藤哲也松冈孝明
Owner TOHOKU UNIV