Floating body dynamic random access memory unit capable of increasing writing speed and manufacturing method thereof

Abstract

The invention relates to a floating body dynamic random access memory unit capable of increasing the writing speed, comprising an oxide buried layer forming on bottom-layer silicon, wherein a plurality of first MOS (Metal Oxide Semiconductor) transistors and second MOS transistors are arranged above the oxide buried layer; the bottom of each MOS transistor is provided with a substrate; two ends of the substrate is in contact with shallow trench isolation; the upper end of the substrate, which is close to the shallow trench isolation, is respectively provided with a source end and a drain end; the substrate between the source end and the drain end is provided with a trench; a grid electrode is arranged above the channel and is positioned at the neutral position of the shallow trenches at two ends of each MOS transistor; one side of the drain end, which is far away from the shallow trench isolation, is provided with a first ion doping region; one side of the source end, which is far away from the shallow trench isolation, is provided with a second ion doping region, and the area of the first ion doping region is larger than that of the second ion doping region; and an overlapped region between the grid electrode and the drain end in the vertical direction is larger than an overlapped region between the grid electrode and the source end in the vertical direction.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of a floating body effect memory cell (Floating Body Cell, FBC), which belongs to the technical field of semiconductor preparation, and in particular to a high writing speed memory cell and a manufacturing method thereof. Background technique [0002] The development of embedded dynamic memory technology has made large-capacity DRAM very common in current system-on-chip (SOC). Large-capacity embedded dynamic memory (eDRAM) brings various benefits to SOCs, such as improved bandwidth and reduced power consumption, that can only be realized by using embedded technology. In addition to transistors, each memory cell of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the memory cell much larger than its width, which makes the manufacturing process difficult. Its manufacturing process is very incompati...

AI Technical Summary

Problems solved by technology

In addition to transistors, each storage unit of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult

Its manufacturing process is very incompatible with CMOS VLSI process, which limits its application in embedded system chips

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