Multi-layer metal-silicon nitride-metal capacitor and manufacturing method thereof
A multi-layer metal and manufacturing method technology, applied in the field of capacitors, can solve the problems of unsatisfactory breakdown voltage and leakage current electrical characteristics, and achieve the effects of improving breakdown voltage, increasing capacitance, and improving performance
Active Publication Date: 2015-06-03
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0006] However, the breakdown voltage, leakage current and other electrical characteristics of current metal-silicon nitride-metal (MOM) capacitors are not satisfactory.
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[0043] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The specific embodiments described here are only used to explain the present invention, and are not used to limit the protection scope of the present invention.
[0044] refer to figure 1 A schematic diagram of a multilayer metal-silicon nitride-metal capacitor shown, the multilayer metal-silicon nitride-metal capacitor of the present invention has a mixed layer of several layers of low-k dielectrics and silicon nitride, figure 1 In , two adjacent mixed layers are marked with dotted lines. As shown in the figure, each mixed layer includes:
[0045] Several low-k value dielectric regions 11 and several high-k value silicon nitride regions 12 distributed alternately in the horizontal direction;
[0046] Each low-k value dielectric region 11 has a first metal groove 301, and the first metal groove 301 is filled with metal;
[0047] Each...
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Abstract
A multi-layer metal-silicon nitride-metal capacitor is characterized in that the multi-layer metal-silicon nitride-metal capacitor is provided with a plurality of low k value medium and silicon nitride mixing layers; each mixing layer includes a plurality of low k value medium areas and a plurality of high k value silicon nitride areas which are distributed in the horizontal direction in a staggered manner; each low k value medium area is provided with first metal troughs, and metals are filled in each first metal trough; each high k value silicon nitride area is provided with a plurality of second metal troughs, and metals are filled in each second metal trough. In the invention, through improving the k value of a dielectric medium of the capacitor among and in the layers, the capacitance of the capacitor among and in the layers is effectively improved. The invention has the beneficial effect that through improving the performance of silicon nitride with high k value, the breakdown voltage, the leakage current and other electrical characteristics of the metal-silicon nitride-metal (Metal-Oxide-Metal) capacitor as well as the electrical uniformity among all the parts are effectively improved.
Description
technical field [0001] The invention relates to a capacitor in an integrated circuit, in particular to a multilayer metal-silicon nitride-metal capacitor and a manufacturing method thereof. Background technique [0002] Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. A widely used capacitor configuration in chips is metal-insulator-metal (MIM) parallel to the silicon substrate. Among them, the metal is copper, aluminum, etc., whose manufacturing process is easily compatible with the metal interconnection process, and the insulator is a dielectric material with a high dielectric constant (k) such as silicon nitride and silicon oxide. [0003] In the prior art, improving the performance of high-k dielectric materials is one of the main methods to improve the performance of capacitors. For example, Chinese patent CN101577227A introduces a method for improving the p...
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IPC IPC(8): H01L29/92H01L21/02
Inventor 毛智彪胡友存徐强
Owner SHANGHAI HUALI MICROELECTRONICS CORP