Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, manufacturing tools, etc., can solve problems such as productivity limitations and time-consuming
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no. 1 example
[0054] A method of manufacturing a semiconductor device according to a first embodiment of the present disclosure will be described with reference to the drawings. The manufacturing method includes a recombination layer forming process and an etching process. In the reformation layer formation process, a substrate made of single crystal silicon is irradiated with a pulsed laser beam while moving the focus of the laser beam, thereby partially polycrystallizing the single crystal silicon and forming a continuous reformation layer in the single crystal silicon. During etching, the recombined layer is removed by etching. The recombination layer forming process may be performed using the laser irradiation device 50 .
[0055] Such as figure 1 As shown, the laser irradiation apparatus 50 includes a laser drive controller 51, a laser source 52, an optical system including a variable focal length lens 53 and a condenser lens 54, a stage 55 on which a substrate 10 is set, a stage dri...
no. 2 example
[0133] A manufacturing method according to a second embodiment of the present disclosure will be described below. The manufacturing method according to the present embodiment can be applied to dynamic quantity sensors including movable parts, such as acceleration sensors and angular velocity sensors. Dynamic quantity sensors can be used, for example, to detect the acceleration or angular velocity of a vehicle.
[0134] Figure 15 and Figure 16 The acceleration sensor manufactured by the method according to this embodiment is shown in .
[0135] Such as Figure 15 As shown, an acceleration sensor is formed from an SOI substrate 110 . The SOI substrate 110 includes a support substrate 111 , a sacrificial layer 112 formed on the support substrate 111 , and a semiconductor layer 113 formed on the sacrificial layer 112 . For example, the thickness of the supporting substrate 111 is 500 μm, the thickness of the sacrificial layer 112 is 3 μm, and the thickness of the semiconduc...
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