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Solution processable passivation layers for organic electronic devices

An organic electronic device and passivation layer technology, which is applied to electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of not discussing the negative impact of ionic impurities on device performance, not proposing, not disclosing passivation layers, etc.

Inactive Publication Date: 2012-05-30
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no passivation layer is disclosed
[0011] Furthermore, the above-cited documents neither address the problem of ionic impurities caused by solution processing of aqueous solutions and their negative impact on device performance, nor do they suggest possible avenues on how to address this problem

Method used

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  • Solution processable passivation layers for organic electronic devices
  • Solution processable passivation layers for organic electronic devices
  • Solution processable passivation layers for organic electronic devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0189] Embodiment 1: Study the influence of solvent on BG OFET device

[0190] A BG OFET device comprising the following components was fabricated:

[0191] - Al gate electrode prepared by evaporation through a mask,

[0192] - Merck Lisicon prepared by spin coating and then curing by 254nm UV rays TM Gate dielectric layer of D181 (from Merck kGaA),

[0193] - Ag source and drain electrodes prepared by evaporating through a mask,

[0194] - Merck Lisicon applied to the electrodes by spin coating TM A self-assembled monolayer of M001 (from Merck kGaA), and

[0195] - by inkjet OSC compounds 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthracene[2,3-b:6,7-b']dithiophene and 2,8 - Difluoro-5,11-bis(triethylsilylethynyl)anthra[2,3-b:7,6-b']dithiophene (as a 50 / 50 mixture of two isomers) OSC layer prepared from a solution in mesitylene.

[0196] The devices were exposed to different solvents for 3 min. Compare the linear mobility of the device before and after solvent ex...

Embodiment 2

[0208] Example 2: Double passivation layer for optimal chemical resistance

[0209] A BG OFET device comprising the following components was fabricated:

[0210] - Al gate electrode prepared by evaporation through a mask,

[0211] - Merck Lisicon prepared by spin coating and curing with >300nm UV rays TM Gate dielectric layer of D206 (from Merck kGaA),

[0212] - Ag source and drain electrodes prepared by evaporating through a mask,

[0213] - a self-assembled monolayer of Merck Lisico M001 (from Merck kGaA) applied to the electrode by spin coating, and

[0214] - by spin-coating the OSC compounds 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthracene[2,3-b:6,7-b']dithiophene and 2,8 - Difluoro-5,11-bis(triethylsilylethynyl)anthra[2,3-b:7,6-b']dithiophene (as a 50 / 50 mixture of two isomers) OSC layers prepared from solutions in ethoxybenzene and cyclopentanol (5% by weight of the total formulation) as solvents.

[0215] Passivation of devices by a two-layer approach:

...

Embodiment 3

[0224] Example 3: Effect of ion concentration in water-based passivation formulations

[0225] The following examples show how removal of ions from water-based passivation materials can improve the retention of properties of the passivation layer after deposition (i.e. reduce loss of properties due to the passivation process).

[0226] BG OFET devices were fabricated as described in Example 1. The device is then passivated by depositing a dialyzed or non-dialyzed water-based orthogonal passivation material on the OSC layer.

[0227] A non-dialyzed batch of ethylene-modified poly(vinyl alcohol) passivation material (Kuraray Exceval HR3010) was prepared by dissolving 10 g of polymer in 100 g of water by boiling the water while stirring the polymer / water mixture.

[0228] A dialysis batch of the same passivation material was prepared by dialysis of the above solution (cellulosis tubing, Mw ~ 14,000). Immerse 100ml of polymer solution in the tubing into 5L of -1 conductivity ...

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Abstract

The present invention relates to solution processable passivation layers for organic electronic (OE) devices, and to OE devices, in particular organic field effect transistors (OFETs), comprising such passivation layers.

Description

field of invention [0001] The present invention relates to solution processable passivation layers for organic electronic (OE) devices, and OE devices comprising such passivation layers, in particular organic field effect transistors (OFETs) and thin film transistors (TFTs). Background of the invention [0002] An important aspect of the fabrication of organic electronic devices or components, such as organic transistors, organic solar cells, or backplanes of display devices featuring drive electronics for individual pixels, is the fabrication technique when providing the individual functional layers of the device. Conventional fabrication techniques are based on chemical vapor deposition and photolithography. [0003] Today, the electronics industry is headed toward replacing expensive vacuum-based processes with solution-processable, printable technologies. This new technology offers the advantages of avoiding the use of high vacuum equipment, which reduces process costs,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/10
CPCH01L51/0007H01L51/448H01L51/5237H01L51/107H10K71/15H10K10/88H10K30/88H10K50/844
Inventor M·詹姆斯N·格雷因特M·卡拉斯克-奥拉斯克P·C·布鲁克斯D·C·穆勒P·E·梅尔S·阿姆斯冲S·S·皮那达姆
Owner MERCK PATENT GMBH