Preparation method of image sensor
An image sensor and pixel technology, applied to radiation control devices, etc., can solve the problems of poor radiation resistance performance, lower image signal-to-noise ratio and dynamic range, and lower light absorption rate, so as to improve the ability to resist high-energy particle radiation and high light absorption. The effect of efficiency and low power consumption
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Embodiment 1
[0068] Such as Figure 1a to Figure 1f As shown, the present invention provides a method for preparing an image sensor, which at least includes the following steps:
[0069] Such as Figure 1a As shown, first perform step 1) to provide a first semiconductor substrate 1 and a second semiconductor substrate 2, wherein the first semiconductor substrate 1 includes: a first supporting substrate 11, located on the surface of the first supporting substrate 11 The first buried insulating layer 12 on it, and the first top semiconductor layer 13 on the surface of the first buried insulating layer 12 .
[0070] Wherein, the material of the first top semiconductor layer 13 is a semiconductor material used to prepare semiconductor devices, including at least any one of silicon, strained silicon, germanium and silicon germanium; the first insulating buried layer 12 is a single layer structure or laminated structure, wherein the material of the single-layer structure or each layer in the l...
Embodiment 2
[0084] Such as Figure 2a to Figure 2f As shown, the present invention provides a method for preparing an image sensor, which at least includes the following steps:
[0085] Such as Figure 2a As shown, first perform step 1) to provide a first semiconductor substrate 1 and a second semiconductor substrate 2, wherein the first semiconductor substrate 1 includes: a first supporting substrate 11, located on the surface of the first supporting substrate 11 The first buried insulating layer 12 on it, and the first top semiconductor layer 13 on the surface of the first buried insulating layer 12 .
[0086] Wherein, the material of the first top semiconductor layer 13 is a semiconductor material used to prepare semiconductor devices, including at least any one of silicon, strained silicon, germanium and silicon germanium; the first insulating buried layer 12 is a single layer structure or laminated structure, wherein the material of the single-layer structure or each layer in the l...
Embodiment 3
[0101] Embodiment 3 adopts basically the same technical solution as Embodiment 1. The main difference is that in Embodiment 1, the first top semiconductor layer 13 of the first semiconductor substrate 1 has a thickness between 0.1 μm and 0.3 μm. The thin film layer of silicon material in between, the second top semiconductor layer 4 is a thick film layer of silicon material with a thickness of 0.3 μm to 10 μm (preferably 2 μm to 3 μm); in the third embodiment, the first semiconductor The first top semiconductor layer 13 of the substrate 1 is a thick film layer of strained silicon material with a thickness between 0.3 μm and 10 μm (preferably a thickness of 6 μm to 8 μm), and the second semiconductor substrate 2 is silicon-on-insulator (SOI) Both the second top semiconductor layer 4 and the top semiconductor layer 23 of the second semiconductor substrate 2 are silicon thin film layers with a thickness between 0.1 μm and 0.3 μm.
[0102] Such as Figure 3a to Figure 3e As shown...
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