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Integrated structure for low-noise amplifier and mixer by means of current multiplexing

A technology of current multiplexing and low-noise amplifiers, which is applied in the direction of amplification control, modulation conversion of semiconductor devices with at least two electrodes, and control of components of amplification devices. It can solve the problems of high power supply voltage requirements and improve the application value, low static power consumption, and low operating voltage

Inactive Publication Date: 2012-06-27
东南大学无锡分校
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  • Application Information

AI Technical Summary

Problems solved by technology

In the past, low-noise amplifiers and mixers multiplexed current circuits, most of which used vertical stacked structures, which required higher power supply voltages.

Method used

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  • Integrated structure for low-noise amplifier and mixer by means of current multiplexing
  • Integrated structure for low-noise amplifier and mixer by means of current multiplexing

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Embodiment Construction

[0014] Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.

[0015] The present invention utilizes the current sharing structure between the low noise amplifier and the mixer to realize the function of bias current sharing between the low noise amplifier and the mixer under the premise of mutual isolation, and significantly reduces static power consumption. At the same time, a differential input transconductance enhancement structure is adopted at the input end, and under the same matching conditions and the same voltage gain condi...

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Abstract

The invention discloses an integrated structure for a low-noise amplifier and a mixer by means of current multiplexing. An input transistor of the low-noise amplifier and a trans-conductance level of the lower down-conversion mixer in the structure multiplex static-state bias current, radio-frequency signals from the low-noise amplifier are isolated from the mixer by the aid of an inductance-capacitance parallel network, radio-frequency signals from the trans-conductance level of the mixer are isolated from the low-noise amplifier by the aid of the inductance-capacitance parallel network and high-output impedance of common-gate transistors, and signal isolation from intermediate-frequency signals of the mixer to the low-noise amplifier direction is jointly realized by the aid of high-output impedance of the common-gate transistors N5 and N6 in a current multiplexing branch and high-output impedance of a double-balanced switching tube working in a saturation region. By the aid of multiplexing current of the low-noise amplifier and the mixer, current utilization efficiency is greatly improved, and power consumption is reduced. Besides, since a current multiplexing mode in the structure has high signal isolation power, the performance of a circuit is ensured while the power consumption is reduced.

Description

technical field [0001] The invention relates to a fusion structure of a current multiplexing low noise amplifier and a mixer, which can significantly reduce the power consumption of the front end of a radio frequency receiver, and at the same time use current multiplexing to complete the output common mode feedback; it has low power consumption and isolation between modules It has the characteristics of high precision and stable output common mode level; it is suitable for front-end circuits of low-voltage, low-power RF receivers. Background technique [0002] In the 21st century, the development of radio frequency systems is extremely rapid, and the rise of WSN (Wireless Sensor Network) technology can be compared with the Internet. WSN technology places high demands on the low power consumption of RF transceivers. [0003] For existing RF receivers, the input tube of the low noise amplifier needs to do impedance matching and achieve high bandwidth, and the transconductance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03D7/12H03G1/00
Inventor 陈超吴建辉赵强田茜白春风王旭东温俊峰
Owner 东南大学无锡分校