Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing metal nanobelt array with tip

A metal nanometer and cutting-edge technology, applied in the field of preparation of metal nanobelt arrays, can solve the problems of being unsuitable for large area of ​​nanoarray structures, repeatable preparation, expensive manufacturing cost, strong dependence, etc., to improve electromagnetic properties and optical properties. Features, low cost, and promising effects

Active Publication Date: 2012-07-04
NAT UNIV OF DEFENSE TECH
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This preparation method is highly dependent on experimental equipment, and at the same time, the manufacturing cost is relatively expensive, which is not suitable for large-area and repeatable preparation of nano-array structures.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing metal nanobelt array with tip
  • Method for preparing metal nanobelt array with tip
  • Method for preparing metal nanobelt array with tip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The method for preparing a sharp-pointed gold nanobelt array of the present invention includes the following steps:

[0039] (1) Preparation of densely arranged single-layer ordered PS nanospheres:

[0040] a) Prepare silicon wafers: select silicon wafers with a size of 25mm×25mm×0.5mm as the substrate, and put the silicon wafers in acetone, ethanol and deionized water for 30 minutes ultrasonic cleaning respectively, and then mix hydrogen peroxide and 98% concentrated sulfuric acid Prepare the solution and heat it to 80°C. Put the ultrasonically cleaned silicon wafers into it and soak for 1 hour. After soaking, rinse repeatedly to remove acidic substances. Then put the silicon wafers into a solution of ammonia, hydrogen peroxide and water, and heat to 80 ℃, soak for 1 hour, take out the silicon wafer and rinse repeatedly to obtain a clean and hydrophilic surface of the silicon wafer, which is placed in absolute ethanol for use;

[0041] b) Configure the PS nanosphere suspensi...

Embodiment 2

[0047] A method for preparing a gold nanobelt array with a tip on one side. The specific process steps and parameters are the same as in Example 1 (only in step (3) of the vapor deposition of the gold film, the silicon wafer is rotated 15° around its normal direction, See Picture 10 , The resulting gold-plated silicon wafer such as Picture 11 Shown), and finally get Picture 12 The gold nanoribbon array with a tip on one side is shown; Figure 13 As shown, because the silicon wafer is rotated 15° around its normal direction, there is a certain angle between the evaporation direction and the PS nanosphere (1, 0) or (0, 1) crystal orientation. Therefore, the metal nanobelt array obtained in this implementation has nanotips on one side.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a metal nanobelt array with a tip. The method comprises the following process steps of: preparing a single-layer ordered polystyrene nano sphere compact arrangement, preparing a single-layer ordered polystyrene nano sphere non-compact arrangement, performing vapor deposition on metal, preparing a metal nanobelt array and the like, wherein in the vapor deposition process, silicon wafers incline, and a certain included angle is formed between the normal direction and the vapor deposition direction of the silicon wafers, so that the projections of two adjacent polystyrene (PS) nano spheres in the vapor deposition direction onto the silicon wafers are intersected, and the tip is formed at the intersection of the projections to obtain the metal nanobelt array with the tip. The method is high in generality, wide in adaptability, high in compatibility, high in efficiency and low in cost, and can provide convenience for the study of the characteristics of arrays with metal nano structures.

Description

Technical field [0001] The invention relates to the field of nanostructures, in particular to a method for preparing a metal nanobelt array. Background technique [0002] In recent years, metal nanostructure arrays (especially noble metal nanostructure arrays, such as gold, silver, etc.) are attracting more and more attention due to their unique physical and chemical properties. The plasmon resonance generated by the collective excitation of free electrons on the metal surface makes the gold, silver, copper and other metal nanostructure arrays have good optical properties. Experiments show that when the metal tip is present in the metal nanostructure array, the electromagnetic properties at the tip of the array are greatly enhanced, thereby improving the optical characteristics of the array. The nanoribbon structure array with cutting-edge can stimulate the SPR effect and SERS effect of the array, and has important applications in the manufacture of biological / chemical sensors, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00C23C14/04C23C14/24
Inventor 吴学忠董培涛王浩旭王朝光陈剑邸荻吕宇王俊峰
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com